VBA3222
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Dual N-Channel 20-V (D-S) MOSFET
FEATURES
I
D
(A)
7.1
6.0
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.025 at V
GS
= 4.5 V
0.035 at V
GS
= 2.5 V
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
D
1
D
2
G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
± 12
7.1
5.7
40
1.7
2
1.3
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
thJA
Limit
62.5
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
1
VBA3222
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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 10
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 7.1 A
9.5
1.5
2.5
1.6
10
15
38
25
26
ns
2.7
Ω
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 7.1 A
V
GS
= 2.5 V, I
D
= 6.0 A
V
DS
= 10 V, I
D
= 7.1 A
I
S
= 1.7 A, V
GS
= 0 V
20
0.019
0.026
27
1.2
0.025
0.035
0.6
1.5
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBA3222
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 5 V thru 3 V
2.5 V
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
30
40
20
2V
10
20
T
C
= 125 °C
10
25 °C
1 V, 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
- 55 °C
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.10
1000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
800
C
iss
0.06
600
0.04
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.00
0
10
20
I
D
- Drain Current (A)
30
40
400
C
oss
200
C
rss
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 7.1 A
V
GS
- Gate-to-Source Voltage (V)
4
R
DS (on)
- On-Resistance
1.4
1.6
V
GS
= 4.5 V
I
D
= 7.1 A
Capacitance
(Normalized)
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBA3222
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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.10
I
D
= 7.1 A
T
J
= 150 °C
10
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
1.2
1.4
0.08
I
S
- Source Current (A)
0.06
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
0.00
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
30
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
24
- 0.2
Power (W)
0.0
I
D
= 250
µA
18
12
- 0.4
6
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
T
J
- Temperature (°C)
1.00
Time (s)
10.00
Threshold Voltage
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
VBA3222
www.VBsemi.com
SOIC
(NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
7
6
5
E
1
2
3
4
H
S
D
0.25 mm (Gage Plane)
A
h x 45
C
All Leads
q
L
0.101 mm
0.004"
e
B
A
1
MILLIMETERS
DIM
A
A
1
B
C
D
E
e
H
h
L
q
S
5.80
0.25
0.50
0°
0.44
Min
1.35
0.10
0.35
0.19
4.80
3.80
1.27 BSC
6.20
0.50
0.93
8°
0.64
0.228
0.010
0.020
0°
0.018
Max
1.75
0.20
0.51
0.25
5.00
4.00
Min
0.053
0.004
0.014
0.0075
0.189
0.150
INCHES
Max
0.069
0.008
0.020
0.010
0.196
0.157
0.050 BSC
0.244
0.020
0.037
8°
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
5
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