d. Maximum under steady state conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
1
VBE1106N
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.8
50
100
38
12
50
40
1.2
75
150
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 12 A
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
1800
180
60
21
10
9
1.5
10
10
15
10
-
-
-
32
-
-
-
15
15
25
15
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=12A
V
GS
=4.5 V, I
D
=8A
V
DS
= 15 V, I
D
= 12 A
-
100
-
-
0.8
-
-
-
25
-
-
165
-11
1.2
-
-
-
-
0.055
0.057
25
-
-
-
1.6
± 100
1
10
-
0.060
0.062
-
V
mV/°C
V
nA
μA
A
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Note
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBE1106N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 7 V
I
D
- Drain Current (A)
30
10
T
C
= - 55 °C
8
I
D
- Drain Current (A)
V
GS
= 4 . 5 V
T
C
= 25 °C
6
20
4
T
C
= 125 °C
2
10
V
GS
= 1 . 5 V
0
0.0
V
GS
= 2 . 5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
0.4
0.8
1.2
1.6
2.0
2.4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.070
2500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
2000
0.060
V
GS
= 10 V
C - Capacitance (pF)
C
iss
1500
1000
0.050
500
C
rss
0.040
0
6
12
I
D
- Drain Current (A)
18
24
0
0
C
oss
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 50 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 12 A
V
GS
- Gate-to-Source Voltage (V)
8
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50
I
D
= 12 A
V
GS
= 10 V
6
V
DS
= 80 V
4
2
0
0
5
10
15
20
25
30
35
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
On-Resistance vs. Junction Temperature
3
VBE1106N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 12 A
R
DS(on)
- On-Resistance (Ω)
0.07
T
A
= 125 °C
0.06
T
A
= 25 °C
I
S
- Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
0.05
1
0.0
0.04
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
R
DS(on)
vs. V
GS
vs. Temperature
200
4.5
4.0
I
D
= 250 µA
150
Power (W)
3.5
V
GS(th)
(V)
3.0
100
2.5
50
2.0
1.5
- 50
- 25
0
25
50
75
100
125
150
175
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100 µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
VBE1106N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
80
Power Dissipation (W)
30
I
D
- Drain Current (A)
60
20
40
10
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
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