VBE1606
www.VBsemi.com
N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
60
0.0063
0.0120
97
Single
FEATURES
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
D
TO-252
G
G
D
S
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
97
56
100
290
45
101
136
45
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
1.1
UNIT
°C/W
1
VBE1606
www.VBsemi.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 50 A, V
GS
= 0 V
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
1
-
-
-
-
-
-
4844
441
200
82
14.5
13.5
2
14
5
41
7
-
0.9
6060
555
250
125
-
-
3
21
8
62
11
290
1.5
A
V
ns
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5
V
I
D
= 25 A
I
D
= 25 A, T
J
= 125 °C
I
D
= 25 A, T
J
= 175 °C
I
D
= 20 A
60
2.0
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
0.0050
-
-
0.0120
177
-
-
4.0
± 100
1
50
150
-
-
0.0117
0.0149
-
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 25 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBE1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
160
V
GS
= 10 V thru 5 V
128
I
D
- Drain Current (A)
120
96
I
D
- Drain Current (A)
96
72
T
C
= 25
°C
64
V
GS
= 4 V
32
48
24
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
350
T
C
= - 55
°C
280
g
fs
- Transconductance (S)
Transfer Characteristics
0.015
V
GS
= 4.5 V
0.0012
R
DS(on)
- On-Resistance (Ω)
210
T
C
= 25
°C
T
C
= 125
°C
0.009
140
0.006
V
GS
= 10 V
0.003
70
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
8000
On-Resistance vs. Drain Current
10
I
D
= 50 A
V
DS
= 30 V
6
4800
C
iss
3200
C
rss
1600
C
oss
0
0
12
24
36
48
60
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
6400
C - Capacitance (pF)
8
4
2
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
3
VBE1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 25 A
2.1
V
GS
= 10 V
V
DS
- Drain-to-Source Voltage (V)
76
I
D
= 1 mA
80
1.7
V
GS
= 4.5 V
1.3
72
68
0.9
64
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
60
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
100
0.05
10
0.04
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
I
S
-
Source
Current (A)
1
0.03
0.1
T
J
= 25
°C
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0
2
4
6
8
10
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance (V)
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Threshold Voltage
4
VBE1606
www.VBsemi.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
100
I
D
- Drain Current (A)
I
DM
Limited
10
100 μs
1 ms
10 ms
100 ms
1
s,
10
s,
DC
1
Limited by R
DS(on)
*
0.1
T
C
= 25
°C
Single
Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
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