d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
t
≤
5s
Symbol
R
thJA
R
thJF
Typical
40
Maximum
50
Unit
1
VBI1322
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 6.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 6.7 A, V
GS
= 0 V
0.8
20
10
10
10
T
C
= 25 °C
5.2
30
1.2
40
20
A
V
ns
nC
ns
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.5
Ω
I
D
≅
6.7 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1.5
Ω
I
D
≅
6.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 6.3 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.3 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 6.3 A
V
GS
=
2.5 V, I
D
= 4.5 A
V
DS
= 10 V, I
D
= 6.3 A
30
0.022
0.030
45
1200
220
100
22
10
2.5
1.7
2.4
15
10
35
12
10
12
25
10
25
15
55
20
15
20
40
15
ns
Ω
33
15
nC
pF
0.033
0.045
0.6
30
25
- 4.0
1.5
± 100
1
10
µA
A
Ω
S
mV/°C
V
nA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBI1322
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 thru 3 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
T
C
= - 55 °C
18
V
GS
= 2.5V
12
6
T
C
= 125 °C
4
6
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
V
GS
= 1.5 V
2.5
3.0
2
T
C
= 25 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.032
0.030
1200
1500
C
iss
C - Capacitance (pF)
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.028
0.026
0.024
0.022
0.020
0.018
C
rss
900
V
GS
= 2.5 V
600
C
oss
300
V
GS
= 4.5 V
0.016
0
6
12
18
24
30
0
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 6 6.3 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
V
DS
= 10 V
6
V
DS
= 16 V
4
1.4
1.6
I
D
= 6 6.3 A
Capacitance
V
GS
= 4.5 V, 2.5 V
(Normalized)
1.2
1.0
2
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBI1322
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.050
I
D
= 6.3 A
0.040
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
0.030
T
J
= 25 °C
0.020
T
J
= 125 °C
T
J
= 25 °C
0.010
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.4
50
On-Resistance vs. Gate-to-Source Voltage
1.2
I
D
= 250 µA
40
V
GS(th)
(V)
1.0
Power (W)
30
0.8
20
0.6
10
0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
100 µs
10
I
D
- Drain Current (A)
1 ms
1
Single Pulse Power
10 ms
100 ms
1s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBI1322
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
18
8
15
6
I
D
- Drain Current (A)
12
Power (W)
100
125
150
9
Package Limited
4
6
2
3
0
0
25
50
75
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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