b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBA1410
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10
V
thru 5
V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
6
T
C
= 25 °C
4
20
4
V
10
3
V
0
0
0.4
0.8
1.2
1.6
2.0
2
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.024
2400
Transfer Characteristics
2000
R
DS(on)
- On-Resistance (Ω)
0.019
C - Capacitance (pF)
V
GS
= 4.5
V
C
iss
1600
0.014
V
GS
= 10
V
0.009
1200
800
C
oss
400
C
rss
0.004
0
10
20
30
40
50
0
0
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 20 V
I
D
= 12.4 A
R
DS(on)
- On-Resistance
(Normalized)
1.8
V
GS
= 10 V
I
D
= 12.4 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
35
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBA1410
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
0.030
I
D
= 12.4 A
0.025
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
0.020
125 °C
0.015
0.010
25 °C
0.005
T
J
= 25 °C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
V
GS(th)
(V)
1.8
1.6
1.4
10
1.2
1.0
- 50
Power (W)
30
I
D
= 250
µA
40
50
On-Resistance vs. Gate-to-Source Voltage
20
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power (Junction-to-Ambient)
Limited
by
R
DS(on)
*
100
µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
1s
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBA1410
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
6
20
I
D
- Drain Current (A)
Power Dissipation (W)
5
4
15
3
10
2
5
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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