c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
38
20
Maximum
46
25
Unit
°C/W
VBE2338
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A, V
GS
= 0 V
- 0.75
27
16
12
15
T
C
= 25 °C
- 4.1
- 60
- 1.2
45
27
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 10 A
V
GS
= - 4.5 V, I
D
= - 8 A
V
DS
= - 10 V, I
D
= - 10 A
Min.
- 30
Typ.
Max.
Unit
V
- 34
5.3
- 1.0
- 2.5
± 100
-1
-5
- 30
0.033
0.046
28
1350
0.043
0.052
mV/
°C
V
nA
µA
A
Ω
S
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
f = 1 MHz
V
DD
= - 15 V, R
L
= 1.5
Ω
I
D
≅
- 10 A, V
GEN
= - 10 V, R
g
= 1
Ω
0.5
255
190
27
19
6
12
2.2
13
12
40
9
48
4.4
25
24
70
18
80
160
60
35
43
25
pF
nC
Ω
ns
V
DD
= - 15 V, R
L
= 1.5
Ω
I
D
≅
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
92
34
19
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBE2338
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
10
www.VBsemi.com
48
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 10 thru 4 V
36
8
6
T
C
= 125 °C
4
T
C
= 25 °C
2
T
C
= - 55 °C
0
24
12
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
V
GS
= 2 V
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.12
Transfer Characteristics
2000
C
iss
R
DS(on)
- On-Resistance (Ω)
0.10
1600
C - Capacitance (pF)
0.08
1200
0.06
V
GS
= 4.5 V
800
C
oss
400
C
rss
0.04
V
GS
= 10 V
0.02
0
0
10
20
30
40
50
60
0
5
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
8
V
DS
= 10 V
V
DS
= 15 V
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
I
D
= - 10 A
Capacitance
V
GS
= - 4.5 V
V
GS
= - 10 V
1.2
6
4
V
DS
= 20 V
2
1.0
0.8
0
0
12
24
36
48
60
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBE2338
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
10
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.10
www.VBsemi.com
I
D
= 10 A
0.08
0.06
0.1
0.04
T
J
= 125 °C
0.01
0.02
T
J
= 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
I
D
= 250 µA
0.6
V
GS(th)
Variance (V)
136
170
On-Resistance vs. Gate-to-Source Voltage
0.4
Power (W)
I
D
= 5 mA
0.2
102
68
0.0
34
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS
10
100
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
VBE2338
MOSFET TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
17.0
www.VBsemi.com
13.6
I
D
- Drain Current (A)
10.2
6.8
3.4
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6.0
2.0
4.8
1.6
Power (W)
3.6
Power (W)
0
50
100
1.2
2.4
0.8
1.2
0.4
0.0
25
75
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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