b. Maximum under steady state conditions is 80 °C/W.
a, b
t
10
s
Steady State
Symbol
R
thJA
R
thJF
Typical
33
17
Maximum
40
21
Unit
°C/W
1
VBJ2102M
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A
- 0.8
65
180
45
20
T
C
= 25 °C
- 13
- 15
- 1.2
90
270
A
V
ns
nC
ns
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 50 V, R
L
= 25
I
D
- 3 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 50 V, R
L
= 25
I
D
- 3 A, V
GEN
= - 6 V, R
g
= 1
f = 1 MHz
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 3 A
V
DS
= - 50 V, V
GS
= - 6 V, I
D
= - 3 A
V
DS
= - 35 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 3 A
V
GS
= - 6 V, I
D
= - 2 A
V
DS
= - 15 V, I
D
= 3 A
-8
0.200
0.230
12
819
51
32
17.5
13.2
3.4
6.4
6.1
10
55
20
15
11
18
32
20
9.2
20
95
40
30
18
32
58
35
ns
32
25
nC
pF
-2
- 100
- 165
- 6.6
-4
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBJ2102M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10
V
thru 6
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 5
V
1.6
2.0
12
1.2
8
0.8
T
C
= 125 °C
0.4
4
V
GS
= 4
V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
T
C
= 25
T
C
= - 55 °C
0.0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.6
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.5
960
C
iss
0.4
V
GS
= 6
V
0.3
V
GS
= 10
V
C - Capacitance (pF)
720
480
0.2
240
C
oss
0.1
0
4
8
12
16
20
0
0
C
rss
20
40
60
80
100
I
D
- DrainCurrent (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
Capacitance
2.2
R
DS(on)
- On-Resistance (Normalized)
I
D
= 3 A
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 50
V
I
D
= 4 A
1.9
V
GS
= 10
V
8
V
DS
= 75
V
6
V
DS
= 100
V
4
1.6
1.3
V
GS
= 6
V
1.0
2
0.7
0
0
4
8
12
16
20
0.4
- 50
- 25
0
25
50
75
100
125
150
Q
g
- TotalGateCharge(nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBJ2102M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.0
10
R
DS(on)
- On-Resistance (Ω)
1.6
I
S
- Source Current (A)
1.2
T
J
= 150 °C
1
T
J
= 25 °C
0.8
T
J
= 125 °C
0.4
T
J
= 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-SourceVoltage (V)
Source-Drain Diode Forward Voltage
1.0
On-Resistance vs. Gate-to-Source Voltage
200
0.7
V
GS(th)
Variance
(V)
I
D
= 250
µA
0.4
I
D
= 5 mA
0.1
Power (W)
160
120
80
- 0.2
40
- 0.5
- 50
0
- 25
0
25
50
75
100
125
150
0 .0 0 1
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
I
D
- Drain Current (A)
10
Limited
by
R
DS(on)
*
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
1s
10 s
DC
1000
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBJ210M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4
3
I
D
- DrainCurrent (A)
2
1
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
8.0
2.0
6.4
1.6
Power (W)
4.8
Power (W)
1.2
3.2
0.8
1.6
0.4
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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