b. Maximum under steady state conditions is 360 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
a
a
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.4 A
V
GS
= - 2.5 V, I
D
= - 1.2 A
V
GS
= - 1.8 V, I
D
= - 0.3 A
V
DS
= - 5 V, I
D
= - 1.4 A
Min.
- 20
Typ.
Max.
Unit
V
- 14
2.4
- 0.45
- 1.5
± 100
-1
- 10
-2
0.080
0.120
0.140
5
272
mV/°C
V
nA
µA
A
S
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.4 A
V
DS
= - 10 V, V
GS
= - 2.5 V, I
D
= - 1.4 A
f = 1 MHz
V
DD
= - 10 V, R
L
= 9.1
I
D
- 1.1 A, V
GEN
= - 4.5 V, R
g
= 1
1.4
55
44
4.3
2.7
0.7
1.0
7
12
20
23
9
5
14
20
30
35
18
10
20
27
14
-
2.4
-6
- 0.8
18
7
7
11
- 1.2
27
14
6.5
4.1
pF
nC
ns
V
DD
= - 10 V, R
L
= 9.1
I
D
- 1.1 A, V
GEN
= - 8 V, R
g
= 1
10
18
7
T
C
= 25 °C
I
F
= - 0.7 A
A
V
ns
nC
ns
I
F
= - 0.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBK2298
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6.0
V
GS
= 5 V th r u 3 V
V
GS
= 2 . 5 V
0.8
4.5
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.0
V
GS
= 2V
3.0
V
GS
= 1.5 V
1.5
0.6
0.4
T
C
= 25 °C
0.2
T
C
= 125 °C
V
GS
= 1 V
0.0
0.0
0.5
1.0
1.5
2.0
0.0
0.0
0.3
0.6
0.9
T
C
= - 55 °C
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.15
Transfer Characteristics
600
R
DS(on)
- On-Resistance (Ω)
0.13
V
GS
= 1.8 V
C - Capacitance (pF)
450
0.11
C
iss
300
V
GS
= 2.5 V
0.09
V
GS
= 4.5 V
0.07
150
C
oss
C
rss
0.05
0
0.0
1.5
3.0
I
D
- Drain Current (A)
4.5
6.0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4.5
I
D
= 1.4 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.5
1.4
R
DS(on)
- On-Resistance
I
D
= 1.4 A
V
GS
= 2.5 V
3.6
V
DS
= 10 V
2.7
V
DS
= 5 V
1.8
V
DS
= 16 V
1.3
(Normalized)
1.2
1.1
1.0
0.9
0.8
V
GS
= 4.5 V
0.9
0.0
0
1
2
3
4
5
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBK2298
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.32
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
I
D
= 1.4 A
0.24
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
0.16
T
J
= 25 °C
1
0.08
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.00
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.75
10
On-Resistance vs. Gate-to-Source Voltage
0.65
I
D
= 250 μA
Power (W)
- 25
0
25
50
75
100
125
150
V
GS(th)
(V)
8
0.55
6
0.45
4
0.35
2
0.25
- 50
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by R
DS(on)*
Single Pulse Power, Junction-to-Ambient
100 μs
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
100 ms
BVDSS Limited
0.01
0.1
1s
10 s, DC
100
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBK2298
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
1.2
I
D
- Drain Current (A)
0.8
0.4
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
0.6
0.45
0.5
0.36
0.4
Power (W)
Power (W)
0.27
0.3
0.18
0.2
0.09
0.1
0.0
0
25
50
75
100
125
150
0.00
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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