UMW
Type
SMD
■
Features
●
V
DS (V)
= 50V
●
I
D
= 300 mA (V
GS
= 10V)
●
R
DS(ON)
＜
2.5Ω (V
GS
= 10V)
●
R
DS(ON)
＜
3.5Ω (V
GS
=2.5V)
●
Low On-Resistance
●
ESD Rating: 1.5KV HBM
R
UMW BSS138
N-Channel
MOSFET
SOT–23
MARKING
1. GATE
2. SOURCE
3. DRAIN
SS
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
20KΩ
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
DG
V
GS
I
D
P
D
R
thJA
T
J
T
stg
Rating
50
50
±20
300
300
417
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
DS
=30V, I
D
=0.3A,R
G
=50Ω
V
GS
=0V, V
DS
=10V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=50V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=500mA
V
GS
=2.5V, I
D
=500mA
V
DS
=25V, I
D
=0.3A,f=1KHz
100
50
25
8
20
20
ns
pF
0.7
Min
50
0.5
±10
1.5
2.5
3.5
Typ
Max
Unit
V
uA
uA
V
Ω
mS
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1
友台半导½有限公司
UMW
Type
SMD
■
Typical Characterisitics
0.
6
T
j
= 25°
C
V
GS
= 3.5V
R
UMW BSS138
R
DS(ON)
, NORMALIZED DRAIN-SOURCE ON RESISTANCE (
2.45
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
-5
45
95
145
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
V
GS
= 4.5V
I
D
= 0.1A
V
GS
= 10V
I
D
= 0.5A
0.5
I
D
, DRAIN-SOURC E CURRENT (A)
V
GS
= 3.25V
0.4
V
GS
= 3.0V
0.3
V
GS
= 2.75V
0.2
V
GS
= 2.5V
0.1
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Currentvs.Drain-SourceVoltage
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55
-40 -25 -10 5
20
35
50 65
80
95 110 125
140
I
D
= 250uA
8
0.
0.7
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
6
V
GS
= 2.5V
V
DS
= 1V
-55°
C
C
25
°
150
°
C
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
1
5
4
I
D
, DIODE CURRENT (A)
150
°
C
0.1
150
°
C
3
-55°
C
2
25
°
C
0.01
25
°
C
1
-55°
C
0
0
0.05 0.1
0.15
0.2
0.25
0.3 0.35
0.4
0.45
0.001
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Drain-Source On Resistance vs. Drain Current
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 6 Body Diode Current vs. Body Diode Voltage
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2
友台半导½有限公司
UMW
Type
SMD
■
Typical Characterisitics
3.5
V
GS
= 10V
R
UMW BSS138
100
150
°
C
3
V
GS
= 0V
f = 1MHz
2.5
2
1.5
1
0.5
C, CAPACITANCE (pF)
C
iSS
10
C
OSS
C
25
°
-55°
C
C
rSS
0
0
0.05 0.1
0.15
0.2
0.25
0.3 0.35
0.4
0.45
0.5
1
I
D
, DRAIN CURRENT (A)
Fig. 7 Drain-Source On Resistance vs. Drain Current
0
5
10
15
20
25
30
V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 8 Capacitance vs. Drain Source Voltage
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3
友台半导½有限公司
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