UMW
R
UMW IRLML5203
SOT-23 Plastic-Encapsulate MOSFETS
SOT–23
IRLML5203
P-Channel 30-V(D-S) MOSFET
V
(BR)DSS
-30V
R
DS(on)
MAX
\85mΩ@
-10
V
145
mΩ@
-4.5V
I
D
-3.
0A
1. BASE
2. EMITTER
3. COLLECTOR
General Description
The UMW IRLML5203 uses advanced trench technology to provide excellent
R
DS(on)
with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING
Equivalent Circuit
1H MK
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
-30
±20
-3.0
-24
300
417
150
-55~ +150
Units
V
V
A
A
mW
℃/W
℃
℃
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1
友台半导½有限公司
UMW
R
UMW IRLML5203
SOT-23 Plastic-Encapsulate MOSFETS
T
a
=25
℃
unless otherwise specified
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate -source leakage current
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Gate threshold voltage
Diode forward voltage (note 1)
Dynamic characteristics
(note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Notes:
1. Pulse test: Pulse width
≤300µs,
Duty cycle
≤2%.
2. These parameter have no way to verify.
t
d(on)
t
r
t
d(off)
t
f
V
GS
=-10V,V
DS
=-15V,
R
L
=3.6Ω,R
GEN
=3Ω
8.6
5.0
28.2
13.5
ns
ns
ns
ns
C
iss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,f =1MHz
700
120
75
pF
pF
pF
V
(BR) DSS
I
DSS
I
GSS
R
DS(on)
g
FS
V
GS(th)
V
SD
V
GS
= 0V, I
D
=-250µA
V
DS
=-24V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
GS
=-10V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
V
DS
=V
GS
, I
D
=-250µA
I
S
=-1A,V
GS
=0V
5.5
-1
-3
-1
-30
-1
±100
85
145
V
µA
nA
mΩ
mΩ
S
V
V
Symbol
Test Condition
Min
Typ
Max
Unit
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2
友台半导½有限公司
UMW
100
R
UMW IRLML5203
SOT-23 Plastic-Encapsulate MOSFETS
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
10
1
-2.70V
0.1
1
-2.70V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
I
D
= 3.0A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, Drain-to-Source Current (A)
1.5
10
T
J
= 150
°
C
1
1.0
T
J
= 25
°
C
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.5
0.1
2.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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友台半导½有限公司
UMW
800
R
UMW IRLML5203
SOT-23 Plastic-Encapsulate MOSFETS
20
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
=
-3.0A
V
DS
= -24V
V
DS
= -15V
16
C, Capacitance (pF)
600
C
iss
12
400
8
200
4
C
oss
C
rss
0
1
10
100
0
0
4
8
12
16
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
10
10
10us
T
J
= 150
°
C
100us
1
1
1ms
T
J
= 25
°
C
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0.1
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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4
友台半导½有限公司
UMW
3.0
R
UMW IRLML5203
SOT-23 Plastic-Encapsulate MOSFETS
R
D
V
DS
V
GS
D.U.T.
+
-I
D
, Drain Current (A)
2.0
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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G
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DD
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