UMW
R
UMW AO3416A
N-Channel
MOSFET
■
Features
●
V
DS (V)
= 20V
●
I
D
= 6.5 A (V
GS
= 4.5V)
●
R
DS(ON)
＜
22mΩ (V
GS
= 4.5V)
●
R
DS(ON)
＜
26mΩ (V
GS
= 2.5V)
●
R
DS(ON)
＜
34mΩ (V
GS
= 1.8V)
SOT–23
MARKING
D
1. GATE
2. SOURCE
3. DRAIN
AR6E
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
Ta=25℃
Ta=70℃
t≤10sec
Steady State
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
Rating
20
±8
6.5
5.2
30
1.4
0.9
90
125
80
150
-55 to 150
℃
℃/W
W
A
Unit
V
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友台半导½有限公司
UMW
R
UMW AO3416A
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Current
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
Test Conditions
I
D
=250uA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V, Ta=70℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
, I
D
=250μA
V
DS =
5 V, V
GS
= 4.5 V
V
GS
=4.5V, I
D
=6.5A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=4.5V, I
D
=6.5A TJ=125℃
V
GS
=2.5V, I
D
=5.5A
V
GS
=1.8V, I
D
=5A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charg
Maximum Body-Diode Continuous Current
Diode Forward Voltage
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1.0A,V
GS
=0V
0.62
V
DS
=10V, ,V
GEN
=4.5V
R
L
=1.54Ω,R
G
=3Ω
I
F
= 6.5A, d
I
/d
t
= 100A/μs
V
GS
=4.5V, V
DS
=10V, I
D
=6.5A
V
GS
=0V,V
DS
=0V,f=1MHz
V
GS
=0V,V
DS
=10V,f=1MHz
V
DS
=5V, I
D
=6.5A
50
1295
160
87
1.8
10
4.2
2.6
280
328
3.76
2.24
31
6.8
2
1
41
nC
A
V
ns
nC
KΩ
1650
pF
0.4
30
22
30
26
34
S
mΩ
Min
20
1
5
±10
1.1
Typ
Max
Unit
V
uA
uA
V
A
*1 Pulse test: PW
≤
300us duty cycle≤ 2%.
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友台半导½有限公司
UMW
R
UMW AO3416A
■
Typical Characterisitics
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
V
GS
=2.5V
I
D
=5.5A
1.4
V
GS
=1.8V
I
D
=5A
V
GS
=1.5V
2.5V
3.1V
4.5V
I
D
(A)
1.8V
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
V
DS
=5V
25
Ω
R
DS(ON)
(mΩ)
V
GS
=1.8V
20
V
GS
=2.5V
15
V
GS
=4.5V
1.2
1
V
GS
=4.5V
10
I
D
=6.5A
10
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
4
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
60
I
D
=6.5A
50
R
DS(ON)
(mΩ)
Ω
40
30
20
10
0
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
125°C
1.0E+00
40
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
25°C
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友台半导½有限公司
UMW
R
UMW AO3416A
■
Typical Characterisitics
5
V
DS
=10V
I
D
=6.5A
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
C
rss
10
15
V
DS
(Volts)
p
Figure 8: Ca acitance Characteristics
5
20
C
oss
C
iss
4
V
GS
(Volts)
3
2
1
100.0
10000
10µs
10.0
Power (W)
I
D
(Amps)
R
DS(ON)
limited
1000
T
J(Max)
=150°C
T
A
=25°C
100µs
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
100ms
10s
DC
1.0
100
0.1
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
Single Pulse
T
on
0.01
0.1
1
T
10
100
1000
0.01
0.001
0.00001
0.0001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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