TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET
TSK80R240S1
800V 18.4A N-Channel SJ-MOSFET
Features
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 850V @TJ = 150
℃
• Typ. RDS(on) = 0.21Ω
• Ultra Low gate charge (typ. Qg = 27.5nC)
• 100% avalanche tested
TO-247
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
(Note 1)
(Note 3)
Value
800
18.4*
11.6*
51*
±30
485
3.5
1
15
151
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Ver.B1
Value
0.83
0.5
62
Unit
℃/W
℃/W
℃/W
www.truesemi.com
© 2015 Truesemi Semiconductor Corporation
Electrical Characteristics TC = 25℃
unless otherwise noted
TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0V, I
D
= 250µA,
T
J
= 25℃
V
GS
= 0V, I
D
= 250µA,
T
J
= 150℃
I
D
= 250µA, Referenced to
25℃
V
DS
= 800V, V
GS
= 0V
-T
J
= 150℃
800
--
--
--
--
--
--
850
0.6
--
10
--
--
--
--
--
1
--
100
-100
V
V
V/℃
µA
µA
nA
nA
ΔBV
DSS
/ Δ
TJ
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
V
GS
= 30V, V
DS
= 0V
Forward
Gate-Body Leakage Current,
V
GS
= -30V, V
DS
= 0V
Reverse
Gate Threshold Voltage
Static Drain-Source On-
Resistance
Forward Trans conductance
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 9A
V
DS
= 40V, I
D
= 18A
2.5
--
--
--
0.21
4.5
0.24
V
Ω
S
16
1290
380
22
--
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
--
--
--
--
--
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 400V, I
D
= 10A
R
G
= 20Ω(Note 4)
V
DS
= 480V, I
D
= 10A
V
GS
= 10V (Note 4)
--
--
--
--
--
--
--
40
21
139
21
27.5
6.3
11.2
-
-
-
-
--
-
-
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
Maximum Continuous Drain-Source Diode Forward
Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
V
GS
= 0V, I
F
= 10A
Voltage
V
GS
= 0V, I
F
= 10A
Reverse Recovery Time
di
F
/dt =100A/µs
Reverse Recovery Charge
Peak reverse recovery Current
--
--
-
-
1
475
5.8
35
18
51
1.5
-
-
--
A
A
V
SD
t
rr
Irrm
NOTES:
--
--
--
--
V
ns
µC
A
Q
rr
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
=3.5A, V
DD
=50V, Starting TJ=25
℃
3. I
SD
≤18.4A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25
℃
4. Essentially Independent of Operating Temperature Typical Characteristics
2
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
Typical Performance Characteristics
TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET
Power dissipation
Max. transient thermal impedance
P
tot
[w]
Tc[℃]
T
P
[s]
Safe operating area
TC=25 ℃
Typ. output characteristic
V
DS
[V]
I
D
=f(V
DS
); T
C
=25
℃;
V
GS
> 7V;
D=0; parameter t
p
© 2015 Truesemi Semiconductor Corporation
I
D
=f(V
DS
); T
j
=25
℃;
parameter
t
p
=10us,V
GS
Ver.B1
3
www.truesemi.com
Typical Performance Characteristics
TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET
Typ. output characteristic
Typ. Drain-Source on resistance
I
D
=f(V
DS
); T
j
=150
℃;
parameter t
p
=10us,V
GS
Typ. Drain-Source on resistance
I
DS(on)
R
DS(on)=
f(I
D
); T
j
=150
℃;
parameter V
GS
Typ. Transfer characteristic
R
Dson
=f(T
j
); T
j
=150
℃;
parameter
I
D
=11A V
GS
=10V
© 2015 Truesemi Semiconductor Corporation
I
D
=f(V
DS
); V
DS
=20V ;
parameter t
p
=10us,
4
Ver.B1
www.truesemi.com
Typical Performance Characteristics
TSK80R240S1 800V 18.4A N-Channel SJ-MOSFET
Forward characteristics of reverse diode
Typ. gate charge
V
GS
[V]
I
F
[A]
V
SD
[V]
I
F
=f(V
SD
); parameter: T
j
Avalanche energy
QV
G
[nC]
V
GS
=f(Q
g
), I
D
=11 A pulsed
Drain-source breakdown voltage
T
j
[℃]
V
BR(DSS)
[V]
E
AS
[mJ]
T
j
[℃]
V
BR(DSS)
=f(T
j
); I
D
=1.0 mA
5
www.truesemi.com
E
AS
=f(T
j
); I
D
=3.5 A; V
DD
=50 V
© 2015 Truesemi Semiconductor Corporation
Ver.B1
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