TSA9N90M
TSA9N90M
900V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 9.0A,900V,Max.R
DS(on)
=1.40Ω @ V
GS
=10V
• Low gate charge(typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
E
AR
I
AR
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T
C
=25℃ unless otherwise specified
Parameter
Value
900
±
30
T
C
= 25℃
T
C
= 100℃
(Note 1)
(Note 2)
(Note 1)
(Note 1)
9.0
5.7
36
900
13
9
130
-55 to +150
300
Units
V
V
A
A
A
mJ
mJ
A
W
℃
℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche current
Power Dissipation (T
C
= 25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Typ.
--
--
Max.
0.96
40
Units
℃/W
℃/W
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
TSA9N90M
Electrical Characteristics
T
C
=25
℃
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
fs
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward transfer conductance
V
DS
= V
GS
, I
D
= 250 uA㎂
V
GS
= 10 V, I
D
= 4.5 A
V
DS
= 15V, I
D
= 4.5A
(Note 4)
3.0
--
--
--
1.12
12
5.0
1.4
--
V
Ω
S
Off Characteristics
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
V
GS
= 0 V, I
D
= 250 uA㎂
V
DS
= 900 V, V
GS
= 0 V
V
DS
= 720 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
=- 30 V, V
DS
= 0 V
900
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
V
uA
uA
nA㎁
nA㎁
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2600
175
14
--
--
--
pF㎊
pF㎊
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 720 V, I
D
= 9.0 A,
V
GS
= 10 V
(Note 4,5)
V
DS
= 450 V, I
D
= 9.0 A,
R
G
= 25 Ω
(Note 4,5)
--
--
--
--
--
--
--
50
120
100
75
52
16
20
--
--
--
--
68
--
--
ns
ns㎱
ns㎱
ns㎱
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=21.0mH, I
AS
=9.0A, V
DD
=50V, R
G
=25
Ω,
Starting TJ=25
℃
3. I
SD
≤9.0A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25
℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 9 A, V
GS
= 0 V
I
S
= 9.0A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
550
6.5
9
36
1.4
--
--
A
V
ns㎱
uC
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
Typical Characteristics
TSA9N90M
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
TSA9N90M
Typical Characteristics
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
TSA9N90M
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
BV
DSS
I
AS
1
E
AS
= ---- L
L
I
AS2
2
I
D
(t)
10V
DUT
V
DD
t
p
V
DS
(t)
Time
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
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