T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3726
DESCRIPTION
The TDM3726 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 3.3mΩ @ VGS=4.5V
RDS(ON) < 2.6mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous(Silicon Limited)
Drain Current @ Continuous(Package Limited)
Drain Current @ Current‐Pulsed
(Note 1)
Maximum Power Dissipation
Avalanche Energy, Single Pulse
Maximum Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Case
Thermal Resistance,Junction‐to‐Ambient
(Note 1)
R
θJC
R
θJA
0.6
60
℃/W
℃/W
Symbol
V
DS
V
GS
I
D
（T
C
=25℃）
I
D
（T
C
=100℃）
I
D
（T
C
=25℃）
I
DM
（T
C
=25℃）
P
D
(T
C
=25℃)
EAS(L=0.4mH)
T
J
T
STG
Limit
40
+20
200
142
69
540
250
320
150
‐55 To 150
Unit
V
V
A
A
A
A
W
mJ
℃
℃
August 22, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3726
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
Static
Characteristics
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
V
SD
V
GS
=0V,I
S
=20A
‐
0.9
1.2
V
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3. Guaranteed by design, not subject to production testing
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Condition
V
GS
=0V I
D
=250μA
V
DS
=40V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=VGS,I
D
=250μA
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=20A
Min
40
‐
‐
1
‐
‐
‐
‐
‐
Typ
‐
‐
‐
1.8
2.6
2.2
7356
814
547
26
21
75
25
70
20
35
40
50
Max
‐
1
±100
2.2
3.3
2.6
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
Unit
V
μA
nA
V
mΩ
mΩ
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
V
DS
=20V,V
GS
=0V, F=1.0MHz
V
DS
=20V, R
L
=10Ω, V
GEN
=10V,
R
G
=10Ω I
D
=20A
‐
‐
‐
‐
V
DS
=20V,I
D
=20A,V
GS
=10V
‐
‐
‐
I
F
=20A, dI/dt=200A/μs
‐
‐
nS
nC
August 22, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3726
Typical Operating Characteristics
August 22, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3726
Typical Operating Characteristics(Cont.)
August 22, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3726
Typical Operating Characteristics (Cont.)
August 22, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
5
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