T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3744
DESCRIPTION
The TDM3744 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
80V/196A
RDS(ON) < 3.9mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
TO220 Package
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
Power Tools
UPS
Motor Control
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous
(Silicon Limited)
Drain Current @ Continuous
(Package Limited)
Drain Current @ Current‐Pulsed
Maximum Power Dissipation
Avalanche Energy, Single Pulse
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient
(Note 2)
Thermal Resistance,Junction‐to‐Case
Symbol
V
DS
V
GS
I
D
(T
C
=25℃)
I
D
(T
C
=100℃)
I
D
(T
C
=25℃)
I
DM
(T
C
=25℃)
P
D
(T
C
=25℃)
E
AS
(L=0.5mH,T
C
=25℃)
T
J,
T
STG
R
θJA
R
θJC
Limit
80
+20
196
139
180
500
272
306
‐55 To 175
60
0.55
Unit
V
V
A
A
A
A
W
mJ
℃
℃/W
℃/W
December 17, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
R
G
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
T
rr
Q
rr
V
GS
=0V,I
S
=20A
I
F
=20A, dI/dt=400A/μs
V
DD
=40V,I
D
=20A,V
GS
=10V
V
DD
=40V, V
GS
=10V,R
G
=10Ω
ID=20A
Condition
V
GS
=0V I
D
=250μA
V
DS
=80V,V
GS
=0V,Tj=25℃
V
GS
=±20V,V
DS
=0V
V
DS
=VGS,I
D
=250μA
V
GS
=10V, I
D
=20A
V
DS
=5V, I
D
=20A
V
DS
=0V,V
GS
=0V, F=1.0MHz
V
DS
=40V,V
GS
=0V, F=1.0MHz
Min
80
‐
‐
2
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
Typ
‐
‐
‐
3
3.2
70
1.3
DATASHEET
TDM3744
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
Gate Threshold Voltage
Drain‐Source On‐State Resistance
Transconductance
Gate Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
REVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Max
‐
1
±100
4
3.9
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
1.2
‐
‐
Unit
V
μA
nA
V
mΩ
S
Ω
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
3635
1317
91
13
18
44
25
74
17
31
0.9
44
155
V
nS
nC
December 17, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3744
Typical Operating Characteristics
December 17, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3744
Typical Operating Characteristics(Cont.)
December 17, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3744
Typical Operating Characteristics (Cont.)
December 17, 2018
Techcode Semiconductor Limited
www.techcodesemi.com
5