T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM3407
DESCRIPTION
The TDM3407 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
‐40V PMOS
RDS(ON) < 17mΩ @ VGS=‐4.5V
RDS(ON) < 11mΩ @ VGS=‐10V
RDS(ON) < 9.5mΩ @ VGS=‐20V
Reliable and Rugged
HBM ESD protection level pass 8KV
Lead free product is available
SOP‐8 Package
Application
PWM applications
Load switch
Power management
Top View of Sop‐8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current(V
GS
=‐10V)
note1
300μs Pulsed Drain Current Tested(V
GS
=‐10V)
note1
Continuous Drain Current (VGS=‐10V)
note2
300μs Pulsed Drain Current Tested
note2
Diode Continuous Forward Current
note2
Maximum Power Dissipation
note1
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
I
D
(
T
A
=25℃
)
I
D
(
T
A
=70℃
)
I
DP(
T
A
=25℃
)
I
D
(
T
C
=25℃
)
I
D
(
T
C
=100℃
)
I
DP(
T
C
=25℃
)
I
S
P
D(
T
A
=25℃
)
P
D(
T
A
=70℃
)
T
J
T
STG
Rating
‐40
+25
‐16.5
‐13.2
‐66
‐54
‐34
‐210
‐25
4.2
2.7
150
‐55 to 150
Unit
V
V
A
A
A
A
A
A
A
W
W
℃
℃
June 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
P-Channel Enhancement Mode MOSFET
Thermal Resistance‐Junction to Ambient
note1
Thermal Resistance‐Junction to Lead
note2
R
θJA
R
θJL
75
24
DATASHEET
TDM3407
℃/W
℃/W
NOTES:
1. Surface Mounted on 1in
2
pad area, t≤ 10sec. R
θJA
steady state t = 999s.
2. The power dissipation P
D
is based on T
J(MAX)
= 150
o
C, and it is useful for reducing junction‐to‐case thermal resistance (R
θJC
)
when additional heat sink is used.
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
SD
=‐1A
‐
‐0.7
‐1
V
NOTES:
3
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4
Guaranteed by design, not subject to production testing
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Test Conditions
V
GS
=0V, I
D
=‐250μA
V
DS
=‐32, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS
, I
D
=‐250μA
V
GS
=‐4.5V, I
DS
=‐15A
V
GS
=‐10V, I
DS
=‐25A
V
GS
=‐20V, I
DS
=‐25A
Min
‐40
‐
‐
‐1.5
‐
‐
‐
‐
‐
‐
Typ
‐
‐
‐
‐2
14
9.5
8.5
2780
425
330
17
14
59
22
59
8
16
23
10
Max
‐
‐1
±10
‐2.5
17
11
9.5
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
Unit
V
μA
μA
V
mΩ
mΩ
mΩ
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
V
DS
=‐20V,V
GS
=0V, F=1.0MHz
V
DD
=‐20V, R
L
=20Ω, V
GEN
=‐10V,
R
G
=6 Ω I
DS
=‐1A
‐
‐
‐
‐
V
DS
=‐20V,I
DS
=‐16A,V
GS
=‐10V
‐
‐
‐
I
DS
=‐20A, dI/dt=100A/μs
‐
‐
nS
nC
June 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM3407
Typical Operating Characteristics
June 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM3407
Typical Operating Characteristics(Cont.)
June 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM3407
Typical Operating Characteristics (Cont.)
June 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
5
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