T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM31035
DESCRIPTION
The TDM31035 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
‐100V/‐13A
RDS(ON) <205mΩ @ VGS=‐10V
RDS(ON) < 300mΩ @ VGS=‐4V
Reliable and Rugged
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance‐Junction to Ambient
Thermal Resistance‐Junction to Case
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
Is
I
DP(
T
C
=25℃
)
I
DP(
T
C
=100℃
)
I
D
(
T
C
=25℃
)
I
D
(
T
C
=100℃
)
P
D(
T
C
=25℃
)
P
D(
T
C
=100℃
)
R
θJA
R
θJC
T
J
T
STG
Rating
‐100
+20
‐1
‐52
‐32
‐13
note1
‐8
50
20
50
2.5
150
‐55 to 150
Unit
V
V
A
A
A
A
A
W
W
℃/W
℃/W
℃
℃
NOTES:
1. Max continuous current is limited by bonding wire.
November 17, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
P-Channel Enhancement Mode MOSFET
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Test Conditions
V
GS
=0V I
D
=‐250μA
V
DS
=‐80V,V
GS
=0V
V
GS
=±16V,V
DS
=0V
V
DS
=VGS,I
D
=‐250μA
V
GS
=‐10V, I
DS
=‐7.8A
V
GS
=‐4V, I
DS
=‐6A
Min
‐100
‐
‐
‐1
‐
‐
‐
‐
‐
V
DD
=‐30V, R
L
=30 Ω, V
GEN
=‐10V,
R
G
=6 Ω I
DS
=‐1A
‐
‐
‐
‐
V
DS
=‐50V,I
DS
=‐7.8A,V
GS
=‐10V
‐
‐
‐
I
DS
=‐7.8A, dI/dt=100A/μs
‐
‐
V
GS
=0V,I
SD
=‐1A
‐
DATASHEET
TDM31035
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
V
SD
‐0.75
‐1.1
V
NOTES:
2.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3.
Guaranteed by design, not subject to production testing
Typ
‐
‐
‐
‐
‐
‐
1050
70
40
11
10
55
30
20.9
4.2
5.2
34
59
Max
‐
‐1
±10
‐3
205
300
‐
‐
‐
21
19
100
55
38
‐
‐
‐
‐
Unit
V
μA
μA
V
mΩ
mΩ
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
V
DS
=‐30V,V
GS
=0V, F=1.0MHz
nS
nC
November 17, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM31035
Typical Operating Characteristics
November 17, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM31035
Typical Operating Characteristics(Cont.)
November 17, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM31035
Typical Operating Characteristics (Cont.)
November 17, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
5
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