SL40T65FL
650V 40A
IGBT
Features
High Speed Switching & Low Power Loss
V
CE(sat)
= 1.95V @ I
C
= 40A
E
off
= 0.35mJ @ T
C
= 25°C
High Input Impedance
t
rr
= 80ns (typ.) @di
F
/dt = 1000A/ μs
Maximum junction temperature 175°C
Applications
PFC
UPS
PV Inverter
Welder
IH Cooker
TO-247
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by T
vjmax
T
C
=25°C
T
C
=100°C
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
D
Rating
650
80
40
160
160
40
20
160
±20
375
188
5
-40~175
-55~150
260
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Pulsed collector current, t
p
limited by T
jvjmax
Turn off safe operating area V
CE
≤
600V, T
vj
≤
175°C
T
C
=25°C
Diode forward current limited by T
vjmax
T
C
=100°C
Diode pulsed current, t
p
limited by T
vjmax
Gate-emitter voltage
T
C
=25°C
Power dissipation
T
C
=100°C
Short circuit withstand time
V
CC
≤
400V, V
GE
= 15V, T
vj
= 150°C
Allowed number of short circuits < 1000
Time between short circuits
≥
1.0s
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
tsc
T
vj
T
stg
M
0.6
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Symbol
R
θJA
R
θJC
R
θJC
Rating
40
0.4
1.2
Unit
°C/W
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1
SL40T65FL
Electrical Characteristic
(T
vj
= 25°C unless otherwise specified)
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
BV
CES
V
CE(sat)
I
C
= 2mA, V
GE
= 0V
I
C
= 40A, V
GE
= 15V, T
vj
= 25°C
I
C
= 40A, V
GE
= 15V, T
vj
= 175°C
T
vj
= 25°C
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Total gate charge
Gate-emitter charge
Gate-collector charge
Input capacitance
Reverse transfer capacitance
Output capacitance
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
Switching Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Rate of fall of reverse recovery current
during t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
rr
I
rr
Q
rr
di
rr
/dt
I
F
= 20A, di
F
/dt = 1000A/ μs,
T
vj
= 25°C
V
GE
= 15V, V
CC
= 400V,
I
C
= 40A, R
G
= 7.9Ω,
Inductive Load, T
vj
= 25°C
-
-
-
-
-
-
-
-
-
-
-
58
54
245
40
1.15
0.35
1.50
80
25
1.0
-950
-
-
-
-
-
-
-
-
-
-
-
ns
A
μC
A/μs
mJ
ns
Q
g
Q
ge
Q
gc
C
ies
C
res
C
oes
L
E
I
C(SC)
V
GE
= 15V, V
CC
= 400V,
t
SC
≤
5μs, T
vj
= 150°C
V
CE
= 25V, V
GE
= 0V,
f = 1MHz
V
CE
= 520V, I
C
= 40A,
V
GE
= 15V
-
-
-
-
-
-
-
-
219
26
115
2818
131
209
13.0
180
-
-
-
-
-
nH
A
pF
nC
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
GE
= 0V, I
F
= 20A
T
vj
= 125°C
T
vj
= 175°C
V
CE
= V
GE
, I
C
= 0.58mA
V
CE
= 650V,
V
GE
= 0V
V
GE
= 20V, V
CE
= 0V
V
CE
= 20V, I
C
= 40A,
T
vj
= 25°C
T
vj
= 175°C
4.0
-
-
-
650
-
1.95
2.3
1.3
1.15
1.1
5.0
-
-
-
17.0
6.0
40
1000
±100
V
μA
nA
S
1.9
V
-
2.4
V
V
Symbol
Conditions
Min
Typ
Max
Unit
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2
SL40T65FL
Switching Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Rate of fall of reverse recovery current
during t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
rr
I
rr
Q
rr
di
rr
/dt
I
F
= 20A, di
F
/dt = 1000A/ μs,
T
vj
= 175°C
V
GE
= 15V, V
CC
= 400V,
I
C
= 40A, R
G
= 7.9Ω,
Inductive Load, T
vj
= 175°C
-
-
-
-
-
-
-
-
-
-
-
61
60
260
38
1.80
0.38
2.18
145
44
3.2
-680
-
-
-
-
-
-
-
-
-
-
-
ns
A
nC
A/μs
mJ
ns
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3
SL40T65FL
160
T
J
= 25C
21V
19V
17V
15V
120
T
J
= 175C
21V 19V 17V
15V
140
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
120
13.0V
80
100
13.0V
80
60
11.0V
60
11.0V
40
9.0V
40
9.0V
V
GE
= 7V
20
20
V
GE
= 7V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector-Emitter Voltage V
CE
[V]
Collector-Emitter Voltage V
CE
[V]
Fig.1 Typical Output Characteristics(T
J
=25℃)
140
V
CE
= 20V
T
J
= 25'C
T
J
= 175'C
Fig.2 Typical Output Characteristics(T
J
=175℃)
4.0
V
GE
= 15V
120
Collector-Emitter Voltage, V
CE
[V]
3.5
80A
Collector Current, I
C
[A]
100
3.0
80
2.5
60
40A
2.0
40
20A
1.5
20
0
5
6
7
8
9
10
11
12
13
14
15
1.0
25
50
75
100
125
150
175
Gate-Emitter Voltage V
GE
[V]
Junction Temperature, T
J
[C]
Fig.3 Typical Transfer Characteristics
Fig.4 Typical Collector-Emitter Saturation Voltage
-Junction Temperature
1.5
160
140
120
100
80
60
40
20
0
0.0
T
J
= 25'C
T
J
= 175'C
1.4
40A
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
1.3
1.2
20A
1.1
1.0
10A
0.9
0.5
1.0
1.5
2.0
2.5
3.0
0.8
25
50
75
100
125
150
175
Forward Voltage, V
F
[V]
Junction Temperature, T
J
[C]
Fig.5 Diode Forward Characteristics
Fig.6 Diode Forward-Junction Temperature
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4
SL40T65FL
6.0
5.5
6000
Cies
Threshold Voltage, V
GE (th)
[V]
V
GE
= 0V
f = 1MHz
5.0
Max.
C apacitance [pF ]
4.5
4000
Typ.
4.0
Min.
3.5
3.0
2.5
2.0
1.5
25
Coes
2000
Cres
50
75
100
125
150
175
0
0
5
10
15
20
25
30
Junction Temperature, T
J
[C]
Collector-Emitter Voltage, V
CE
[V]
Fig.7 Threshold Voltage-Junction Temperature
Fig.8 Typical Capacitance
16
14
V
CC
= 130V
V
CC
= 520V
100
V
CC
= 400V
V
GE
= 15V
R
G
= 7.9ohm
T
C
= 175'C
Gate-Emitter Voltage, V
GE
, [V]
12
10
8
6
4
2
0
0
50
100
150
200
250
td(on)
80
Switching Time [nS]
60
tr
40
20
10
20
30
40
50
60
70
80
Total Gate Charge, Q
G
[nC]
Collector Current, I
C
[A]
Fig.9 Typical Gate Charge
1000
4
Fig.10 Typical Turn on-Collector Current
td(off)
3
V
CC
= 400V
V
GE
= 15V
R
G
= 7.9ohm
T
C
= 175'C
Eon
Switching Time [nS]
100
tf
Switching Loss [mJ]
2
10
V
CC
= 400V
V
GE
= 15V
R
G
= 7.9ohm
T
C
= 175'C
Eoff
1
1
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig.11 Typical Turn off-Collector Current
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Fig.12 Switching Loss-Collector Current
5
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