SL13N50FS
N-Channel
Power MOSFET
●Features：
■
13.0A, 500V, R
DS(on)(Typ)
=0.40Ω@V
GS
=10V
■
Low Gate Charge
■
Low C
rss
■
100% Avalanche Tested
■
Fast Switching
■
Improved dv/dt Capability
●Application:
■
High Frequency Switching Mode Power Supply
■
Active Power Factor Correction
se
Absolute Maximum Ratings(Tc=25C
unless otherwise noted)
Symbol
Parameter
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Tj
Tstg
Drain-Source Voltage
Drain Current
Drain Current
- Continuous(Tc=25C)
- Continuous(Tc=100C)
-Pulsed
(Note1)
Schematic diagram
TO-220F
Value
500
13.0*
8.0*
52*
±30
845
13.0
19.5
4.5
50
0.4
150
-55 to+150
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note2)
(Note1)
(Note1)
(Note3)
Power Dissipation(T
C
=25C)
-Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
*
Drain Current Limited by Maximum Junction Temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Max
2.58
62.5
Unit
C
/W
C
/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
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1
SL13N50FS
Electrical Characteristics(Tc=25C
unless otherwise noted)
Symbol
Parameter
Test Conditons
Off Characteristics
BV
DSS
Drain-source Breakdown Voltage V
GS
=0V ,I
D
=250μA
△BV
DSS
/△T
J
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
D
=250μA
(Referenced to 25C)
V
DS
=500V,V
GS
=0V
V
DS
=400V,Tc=125C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10 V, I
D
=6.5A
V
DS
=20 V, I
D
=6.5A
Min
500
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.63
--
--
--
--
Max
--
--
1
10
100
-100
Unit
V
V/C
I
DSS
Gate-Body Leakage Current,Forward
I
GSSF
Gate-Body Leakage Current,Reverse
I
GSSR
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On-Resistance
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
--
4.0
0.40 0.52
15
1600
g
FS
Forward Transconductance
(Note4)
--
--
--
--
--
--
--
--
--
--
--
13.0
52
1.4
--
--
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
=25V,V
GS
=0V,
Output Capacitance
C
oss
f=1.0MHz
Reverse Transfer Capacitance
C
rss
Switching Characteristics
Turn-On Delay Time
t
d(on)
Turn-On Rise Time
t
r
V
DD
= 250 V, I
D
= 13.0A,
R
G
= 25 Ω
(Note4,5)
Turn-Off Delay Time
t
d(off)
Turn-Off Fall Time
t
f
Total Gate Charge
Q
g
V
DS
= 400 V, I
D
=13.0 A,
Gate-Source Charge
Q
gs
V
GS
= 10 V
(Note4,5)
Gate-Drain Charge
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
I
S
Maximum Pulsed Drain-Source Diode Forward Current
I
SM
Drain-Source Diode Forward Voltage
V
GS
=0V,I
S
=13.0A
V
SD
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=13.0A,
d I
F
/dt=100A/μs
(Note4)
Reverse Recovery Charge
Q
rr
Notes:
1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature.
2、L = 9mH, I
AS
=13.0A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25C.
3、I
SD
≤13.0A, di/dt≤200A/μs, V
DD
≤BV
DSS,
Starting T
J
= 25C.
4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%.
5、Essentially Independent of Operating Temperature.
155
18.5
92
163
152
61
38
11.5
17.7
--
--
--
410
4.5
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2
SL13N50FS
On-Regin Characteristics
Transfer Characteristics
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Capacitance Characteristics
Gate Charge Characteristics
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3
SL13N50FS
Breakdown Voltage Variation
vs. Temperature
On-Resistance Variation
vs. Temperature
Maximum Safe Operating Area
Maximum Drain Current
Vs. Case Temperature
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4
SL13N50FS
TO-220F Package Dimensions
SYMBOL
A
A1
A2
A3
B1
B2
B3
C
C1
C2
min
9.80
2.90
9.10
15.40
4.35
6.00
3.00
15.00
8.80
nom
7.00
max
10.60
3.40
9.90
16.40
4.95
7.40
3.70
17.00
10.80
SYMBOL
D
D1
D2
D3
E
E1
E2
E3
E4
α
min
1.15
0.60
0.20
2.24
0.35
2.30
nom
2.54
UNIT：mm
max
1.55
1.00
0.50
2.84
0.65
3.30
0.70
1.0×45°
30°
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5
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