SL150N03Q
N-Channel
Power MOSFET
General Features
V
DS
=30V,I
D
=150A
R
DS(ON)
<1.6 mΩ @ V
GS
=10V
R
DS(ON)
<2.4 mΩ @ V
GS
=4.5V
Improved dv/dt capability
High density cell design for ultra low Rdson
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Schematic diagram
Applications
Power switching application
MB/VGA/Server Vcore
POL Applications
DFN5X6-8L top view
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous (T
C
=25℃)
Drain Current-Continuous (T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
(25℃)
I
D
(100℃)
Limit
30
±20
150
82
520
166
1.33
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃
I
DM
P
D
T
J
,T
STG
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1
SL150N03Q
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
1.5
℃/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Continuous Source Current
(Note 2)
Pulsed Source Current
(Note 3)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
I
Sm
Condition
V
GS
=0V I
D
=250μA
V
DS
=27V,V
GS
=0V,T
J
=25℃
V
DS
=24V,V
GS
=0V,T
J
=85℃
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
= 30A
V
GS
=4.5V, I
D
=15A
V
DS
=10V,I
D
=15A
Min
30
-
-
-
1.0
-
-
-
-
-
-
Typ
-
-
-
-
1.6
1.2
1.8
30
7720
945
435
28
45
105
40
65
16
21
-
-
-
Max
-
1
10
±100
2.5
1.6
2.4
-
11000
1400
650
56
90
200
80
120
30
40
1.0
130
260
Unit
V
μA
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
A
V
DS
=25V,V
GS
=0V,
F=1.0MHz
V
DD
=15V, I
D
=1A
V
GS
=10V,R
G
=3.3Ω
-
-
-
-
-
-
-
-
-
V
DS
=15V,I
D
=10A,
V
GS
=4.5V
V
GS
=0V,I
S
=1A,TJ = 25°C
V
G
=V
D
=0V,Force Current
Notes:
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Guaranteed by design, not subject to production
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