SL2301S
P-Channel
Power MOSFET
D
General Features
●
V
DS
= -20V,I
D
= -2.4A
Ω
R
DS(ON)
< 200m @ V
GS
=-2.5V
R
DS(ON)
< 140mΩ@ V
GS
=-4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
S
G
Schematic diagram
Application
●
PWM applications
●
Load switch
●
Power management
Marking and Pin Assignment
SOT-23 top view
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage
Gate- Source Voltage
Drain Current (continuous)
Drain Current (pulsed)
Total Device Dissipation
T
A
=
25℃
Junction
Storage Temperature
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Symbol
BV
DSS
V
GS
I
D
I
DM
Max
-20
+8
-2.4
-10
Unit
V
V
A
A
P
D
900
mW
T
J
T
stg
150
-55to+150
℃
℃
1
SL2301S
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted )
Characteristic
Drain-Source Breakdown Voltage
(I
D
= -250uA,V
GS
=0V)
Gate Threshold Voltage
(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward Voltage Drop
(I
S
= -0.75A,V
GS
=0V)
Zero Gate Voltage Drain Current
(V
GS
=0V, V
DS
= -16V, T
A
=
55℃)
Gate Body Leakage
(V
GS
=+8V, V
DS
=0V)
Static Drain-Source On-State Resistance
(I
D
= -2.4A,V
GS
= -4.5V)
Static Drain-Source On-State Resistance
(I
D
= -2A,V
GS
= -2.5V)
Input Capacitance
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Output Capacitance
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Turn-ON Time
(V
DS
= -10V, I
D
= -2.4A, R
GEN
=6
Ω
)
Turn-OFF Time
(V
DS
= -10V, I
D
= -2.4A, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
Min
Typ
—
—
—
Max
—
-1.5
-1.5
Unit
BV
DSS
V
GS(th)
V
SD
-20
-0.4
—
V
V
V
I
DSS
—
—
-1
-10
+100
140
200
—
—
—
u
A
I
GSS
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
—
—
—
—
—
—
—
—
—
600
120
8
n
A
mΩ
mΩ
pF
pF
ns
t
(off)
—
60
—
ns
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2
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