SL2300
N-Channel
Power MOSFET
D
General Features
●
V
DS
= 20V,I
D
= 4.2A
R
DS(ON)
< 40mΩ@ V
GS
=2.5V
R
DS(ON)
< 30m
Ω
@ V
GS
=4.5V
G
S
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
3
D
Application
●
PWM applications
●
Load switch
●
Power management
G 1
2 S
Marking and pin assignment
SOT-23 top view
■
MAXIMUM
RATINGS
Symbol
BV
DSS
V
GS
I
D
I
DM
Max
20
+8
4.2
16
Unit
V
V
A
A
Characteristic
Drain-Source V oltage
Gate- Source V oltage
Drain Current (continuous)
Drain Current (pulsed)
TotalDevice Dissipation
T
A
=
25℃
Junction
Storage Temperature
P
D
1200
mW
T
J
T
stg
150
-55to+150
℃
℃
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1
SL2300
■
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
Characteristic
Drain-Source Breakdown V oltage
(I
D
= 250uA,V
GS
=0V)
Gate Threshold V oltage
(I
D
= 250uA,V
GS
= V
DS
)
Diode Forward V oltageDrop
(I
S
= 0.75A,V
GS
=0V)
Zero Gate V oltageDrain Current
(V
GS
=0V, V
DS
= 16V)
(V
GS
=0V, V
DS
= 16V, T
A
=
55℃)
Gate Body Leakage
(V
GS
=+8V, V
DS
=0V)
Static Drain-Source On-State Resistance
(I
D
=4.2A,V
GS
=4.5V)
(I
D
=2A,V
GS
=2.5V)
(I
D
=1A,V
GS
=1.8V)
Input Capacitance
(V
GS
=0V, V
DS
= 10V,f=1MHz)
Common Source Output Capacitance
(V
GS
=0V, V
DS
= 10V,f=1MHz)
Symbol
Min
Typ
Max
Unit
BV
DSS
20
—
—
V
V
GS(th)
0.45
—
1.2
V
V
SD
—
—
1.3
V
I
DSS
—
—
1
10
+100
u
A
I
GSS
—
—
n
A
R
DS(ON)
—
25
30
50
—
30
40
60
650
mΩ
C
ISS
C
OSS
t
(on)
—
pF
—
—
—
—
150
20
pF
ns
Turn-ON Time
(V
DS
= 10V, I
D
= 3.5A, R
GEN
=10
Ω
)
Turn-OFF Time
(V
DS
= 10V, I
D
= 3.5A, R
GEN
=10
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
t
(off)
—
—
60
ns
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