2N7002
N-Channel
Power MOSFET
D
General Features
●
V
DS
= 60V,I
D
=0.115A
R
DS(ON)
< 7.5
Ω
@ V
GS
=5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
G
S
Schematic diagram
Application
●
Battery protection
●
Load switch
●
Power management
SOT-23 top view
■
MAXIMUM
RATINGS
Symbol
BV
DSS
V
GS
I
DR
I
DRM
Max
60
+20
115
800
Unit
V
V
mA
mA
Characteristic
Drain-Source V oltage
Gate- Source V oltage
Drain Current (continuous)
Drain Current (pulsed)
■
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Derate above25℃
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
Unit
mW
mW/℃
℃/W
R
Θ
JA
T
J
,
T
stg
417
150℃,-55to+150℃
www.slkormicro.com
1
2N7002
■
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
Characteristic
Drain-Source Breakdown V oltage
(I
D
=250uA,V
GS
=0V)
Gate Threshold V oltage
(I
D
=250uA,V
GS
= V
DS
)
Drain-Source On V oltage
(I
D
=50mA,V
GS
=5V)
(I
D
=500mA,V
GS
=10V)
Diode Forward V oltageDrop
(I
SD
=200mA,V
GS
=0V)
Zero Gate V oltageDrain Current
(V
GS
=0V, V
DS
= BV
DSS
)
(V
GS
=0V, V
DS
=0.8BV
DSS
, T
A
=
125℃)
Gate Body Leakage
(V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
(I
D
=50mA,V
GS
=5V)
(I
D
=500mA,V
GS
=10V)
Input Capacitance
(V
GS
=0V, V
DS
=25V,f=1MHz)
Common Source Output Capacitance
(V
GS
=0V, V
DS
=25V,f=1MHz)
Symbol
BV
DSS
V
GS(th)
V
DS(ON)
V
SD
I
DSS
I
GSS
R
DS(ON)
C
ISS
C
OSS
t
(on)
t
(off)
t
rr
Min
60
1.0
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
400
Max
—
2.5
0.375
3.75
1.5
1
500
+100
7.5
7.5
50
25
20
40
—
Unit
V
V
V
V
u
A
n
A
Ω
pF
pF
ns
ns
ns
Turn-ON Time
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
Turn-OFFTime
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
Reverse Recovery Time
(I
SD
=800mA, V
GS
=0V)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3.
Pulse Width<300μs; Duty Cycle<2.0%.
www.slkormicro.com
2
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