May 2015
SE4060,SE6080S,SE8090S
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 40V
R
DS(ON)
= 7mΩ @ V
GS
=10V
Pin configurations
See Diagram below
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings
Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
4060
V
DS
V
GS
I
D
P
D
T
J
40
±20
60
200
65
6080S
60
±20
80
220
110
-55 to 175
8090S
80
±20
80
320
125
V
V
A
W
℃
Units
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE4060,SE6080S,SE8090S
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS
SE4060
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
I
D
=250μA, V
GS
=0 V
V
DS
= 40V, V
GS
=0V
V
GS
=20 V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=20A
1.2
-
1.6
7
40
45
1
100
2.5
13
V
μA
nA
V
mΩ
SE6080S
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
I
D
=250μA, V
GS
=0 V
V
DS
= 48V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=40A
2
7
60
1
100
4
8.5
V
μA
nA
V
mΩ
SE8090S
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
I
D
=250μA, V
GS
=0 V
V
DS
= 80V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=40A
80
1
100
2
-
3
9
4
11
V
μA
nA
V
mΩ
DYNAMIC PARAMETERS
SE4060
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=20V,
f=1MHz
1800
280
190
pF
pF
pF
SE6080S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=40V,
f=1MHz
7765
960
66
pF
pF
pF
SE8090S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=40V,
f=1MHz
4120
520
200
pF
pF
pF
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
Electrical Characteristics
Symbol
Parameter
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
SWITCHING PARAMETERS
SE4060
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
DD
=20V, R
L
=1Ω
R
G
=3Ω
6.4
29.6
17.2
16.8
ns
ns
ns
ns
SE6080S
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V, V
DS
=40V,
R
GEN
=3Ω
24
55
18
17
ns
ns
ns
ns
SE8090S
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V, V
DS
=40V,
R
GEN
=4.7Ω
I
D
=2A
34
103
95
33
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJA
Parameter
Junction to Ambient (each bin with recommended lands)
Typ
-
Max
2.3
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE4060,SE6080S,SE8090S
Typical Characteristics-SE4060
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
FPGA/CPLD
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