SHANGHAI
MICROELECTRONICS CO., LTD.
March 2006
SLVU2.8
Low Voltae EPD TVS Diode For ESD and Latch-Up Protection
General Description
The Ultraslow Capacitance Transient Voltage
Suppressors are designed to low voltage, integrated
circuits from transients caused by electrostatic
discharge (ESD), electrical fast transients (EFT),
tertiary lightning and other induced voltages.
Revision:B
Features
400 W Peak Pulse Power per Line (tp=8/20μs)
One Device protects one Unidirectional Line.
Low Capacitance.
Low Leakage Current.
Low Operating and Clamping Voltages.
Transient Protection for High Speed Data Lines
to
IEC61000-4-2(ESD)±15kV(air),±8kV(Contact)
IEC61000-4-4(EFT) 40A(5/50ns)
IEC61000-4-5(lightning) 24A(8/20us)
Applications
Ethernet – 10/100/1000 Base T
WAN/LAN Equipment
Desktops, Servers, Notebooks & Handhelds
Laser Diode Protection
SOT-23
Absolute Maximum Ratings
Parameter
Peak Pulse Power (tp = 8/20μs) - See Fig1.
Peak Pulse Current (tp = 8/20μs)
Storage Temperature Range
Operating Junction Temperature Range
Symbol
P
PK
I
PP
T
STG
T
J
Value
400
24
-55 to 150
-55 to 150
Units
W
A
°C
°C
Fig1. Peak Pulse Power
VS Pulse Time
SLVU2.8
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
V
SB
I
SB
V
PT
I
PT
V
BRR
I
BRR
Parameter
Peak Pulse Current
Clamping Voltage @ I
PP
Reverse Stand-Off Voltage
Reverse Leakage Current @ V
RWM
Snap-Back Voltage @ I
SB
Snap-Back Current
Punch-Through Voltage
Punch-Through Current
Reverse Breakdown Voltage @ I
BRR
Reverse Breakdown Current
Fig 2. SLVU2.8 IV Characteristic Curve
Electrical Characteristics
Parameter
Reverse Stand-Off Voltage
Punch-Through Voltage
Snap-Back Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Symbol
V
RWM
V
PT
V
SB
I
R
V
C
V
C
V
C
V
C
V
C
Conditions
Pin 3 to 1 or Pin 2 to 1
I
PT
= 2uA, Pin 3 to 1
I
SB
= 50mA, Pin 3 to 1
V
RWM
=2.8V, T=25℃
Pin 3 to 1 or Pin 2 to 1
I
PP
=2A, t
P
=8/20us
Pin 3 to 1
I
PP
=5A, t
P
=8/20us
Pin 3 to 1
I
PP
=24A, t
P
=8/20us
Pin 3 to 1
I
PP
=5A, t
P
=8/20us
Pin 2 to 1
I
PP
=24A, t
P
=8/20us
Pin 2 to 1
Pin 3 to 1 and 2
Junction Capacitance
C
j
(Pin 1 and 2 tied together)
VR =0V, f =1MHz
Junction Capacitance
C
j
Pin 2 to 1 (Pin 3 N.C.)
VR =0V, f =1MHz
3.5
5
pF
70
100
pF
3.0
2.8
1
3.9
7
12.5
8.5
15
Minimum
Typical
Maximum
2.8
Units
V
V
V
uA
V
V
V
V
V
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SLVU2.8
Steering Diode Characteristics
Parameter
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Symbol
V
BRR
I
BRR
V
F
Conditions
I
T
=10uA, Pin 3 to 2
V
RWM
=2.8V, T =25℃
Pin 3 to 2
I
F
=1A, Pin 2 to 3
Minimum
40
1
2
Typical
Maximum
Units
V
UA
V
Typical Characteristics
Fig3. Pulse Waveform
Fig4. Power Derating Curve
Fig5. Clamping Voltage vs.
Peak Pulse Current
Fig6. Forward Voltage vs.
Forward Current
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SLVU2.8
Fig7 Reverse Voltage vs.
Capacitance
Fig8. Insertion Loss S21
Application Note
The SLVU2.8 is ideal for providing protection for electronic equipment that is susceptible to damage
caused by Electrostatic Discharge (ESD), Electrical Fast Transients (EFT) and tertiary lightning effects.
This product is offered in a unidirectional configuration and provides both commonmode and
differential-mode protection.
Unidirectional Common-Mode Protection (Figure 9)
The SLVU2.8 provides one line of unidirectional protection
in a common-mode configuration as depicted in figure 9.
Circuit connectivity is as follows:
Line 1 is connected to Pin 3
Pins 1 and 2 are connected to ground
Fig9.
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SLVU2.8
Bidirectional Common-Mode Protection (Figure 10)
Two SLVU2.8 devices provide one line of bidirectional
protection in a common-mode configuration as depicted
in figure 10.
Circuit connectivity is as follows:
Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2
Pin 2 of Device 1 and Pin 1 of Device 2 are connected to ground
Pin 3 of both devices is not connected
Fig10
.
Bidirectional Differential-Mode Protection (Figure 11)
Two SLVU2.8 devices provide up to two lines of
bidirectional protection in a differential mode configuration
as depicted in figure 11.
Circuit connectivity is as follows:
Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2
Line 2 is connected to Pin 2 of Device 1 & Pin 1 of Device 2
Fig11
.
Circuit Board Layout Protection
Circuit board layout is critical for Electromagnetic Compatibility (EMC) protection. The following
guidelines are recommended:
The protection device should be placed near the input terminals or connectors, the device will divert
the transient current immediately before it can be coupled into the nearby traces.
The path length between the TVS device and the protected line should be minimized.
All conductive loops including power and ground loops should be minimized.
The transient current return path to ground should be kept as short as possible to reduce parasitic
inductance.
Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
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