SE12N65
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 650V
R
DS(ON)
= 630mΩ @ V
GS
=10V
Pin configurations
See Diagram below
TO-220
TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
650
±30
12
28
226
156
-55 to 150
Units
V
V
A
mJ
W
℃
Single Pulse Avalanche Engergy
Total Power Dissipation
@TA=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE12N65
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
2
I
D
=250μA, V
GS
=0 V
V
DS
= 650V, V
GS
=0V
V
GS
=20 V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=6A
V
DS
=30V, I
D
=6A
650
1
100
2
630
3.5
4
750
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=100V,
f=1MHz
1224
65
4
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V, V
DS
=520V,
R
GEN
=9.1Ω
I
D
=6A
V
GS
=10V, V
DS
=520V,
I
D
=6A
35
9
16
16
35
19
18
32
70
38
36
70
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction to Case
Junction to Ambient (t≦10s)
Typ
-
-
Max
0.8
62
Units
℃/W
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE12N65
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE12N65
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE12N65
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
