SE80160G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM
applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 80V
R
DS(ON)
= 2.2mΩ @ V
GS
=10V
TO-263
Suffix “A” designated TO-220 package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
80
±20
160
500
1936
285
-55 to 175
Units
V
V
A
mJ
W
℃
Single Pulse Avalanche Energy
Total Power Dissipation
@TC=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE80160G
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=100V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=20A
V
DS
=5V, I
D
=20A
2
-
60
3
2.2
80
1
100
4
2.8
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V,
f=1MHz
6500
810
310
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=20A
V
GS
=10V, V
DS
=40V,
R
GEN
=2.5Ω
I
D
=2A
V
DS
=40V,
130
36
46
31.5
46
33
17.5
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case(t≤10s)
Typ
-
Max
0.53
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE80160G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE80160G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE80160G
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
stm32/stm8
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