SE100150G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
This device used advanced semiconductor
technology and design to provide excellent RDS(ON) with
low gate charge and low operation voltage. It can be used
in wide variety of application
Excellent package for superior thermal resistance
Optimized technology for DC/DC converters
Easy to use and parallel
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 100V
R
DS(ON)
= 3.0mΩ @ V
GS
=10V
TO-263
TO-247
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
100
±20
150
450
1000
300
-55 to 175
Units
V
V
A
mJ
W
℃
Single Pulse Avalanche Energy
Total Power Dissipation
@TC=25℃
Operating Junction Temperature Range
100
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE100150G
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=100V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=100A
V
DS
=10V, I
D
=50A
2.0
-
50
2.8
3.0
100
1
100
4.0
4.0
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V,
f=1MHz
6100
480
33
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=100A
V
GS
=10V, V
DS
=50V,
R
GEN
=1.6Ω
V
DS
=50V,
160
52
29
35
89
59
29
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case(t≤10s)
Typ
-
Max
0.53
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE100150G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE100150G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE100150G
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
电源技术
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