Jun 2015
SEB0545 & SEB05100
SMD Schottky Barrier Diodes
Revision: A
General Description
This Schottky diode is for use in low voltage,
high frequency rectifier of switching mode power
supplier, DC/DC converters and polarity protection
application.
Low power loss, high efficiency
Low Forward Voltage Drop
High forward surge capacity
Features
Case: SMA, molded epoxy body
Terminal: Matte tin plated leads
Polarity: See mark on body
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectifier
current
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated
load
Operating Junction Temperature Range
T
J
, T
STG
-50 to 150
℃
I
FSM
80
A
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
SEB0545
45
31
45
5.0
SEB05100
100
70
100
Units
V
V
V
A
Electrical Characteristics
Parameter
Maximum instantaneous
forward voltage
Maximum DC reverse
current at blocking voltage
(T
A
=25℃ unless otherwise noted)
Symbol
V
F
Condition
IF=5A
T
C
=25℃
T
C
=125℃
SEB0545
0.42
0.5
50
SEB05100
0.46
Units
V
I
R
mA
Thermal Characteristic
Parameter
Typical Thermal resistance
(T
A
=25℃ unless otherwise noted)
Symbol
R
θJA
(1)
SEB0545~ SEB05100
75
Units
℃/W
1.
P.C.C. Mounted with 0.2”× 0.2”(5.0×5.0mm) copper pads
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SEB0545 & SEB05100
Ratings and Characteristics Curves
(T
A
=25℃ unless otherwise noted)
PEAK FORWARD SURGE CURRENT,
F1G.1-FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
60Hz RESISTIVE OR
INDUCTIVE LOAD
F1G.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
T
L
=100℃
8.3ms Single Half Sine-Wave
(JEDEC Method)
6.0
80
AMPERES
4.0
60
40
2.0
P.C.B.MOUNTED
0.27X0.27″(7.0X7.0mm)
COPPER PAD AREAS
0
50
60
70
80
90
100 110 120 130 140 150 160
20
0
1
10
100
LEAD TEMPERATURE,(
℃
)
F1G.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
T
J
=25℃
Pulse Width=300us
1% Duty Cycle
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
20
F1G.4-TYPICAL REVERSE CHARACTERISTICS
100
1.0
10
0.1
1.0
T
J
=125℃
T
J
=10℃
0.01
0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
F1G.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
100
T
J
=25℃
f=1MHz
Vsig=50mVp-p
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
10
1.0
10
100
REVRESE VOLTAGE, VOLTS
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SEB0545 & SEB05100
Package Outline Dimensions in inches and millimeters
SMA(DO-214AC)
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.net
Website:
http://www.sino-ic.net
33932403
33932405
33933508
33933608
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
微控制器 MCU
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