SE85210
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 85V
R
DS(ON)
= 3.0mΩ @ V
GS
=10V
Pin configurations
See Diagram below
TO-263
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
85
±20
210
850
2200
310
-55 to 150
Units
V
V
A
mJ
W
℃
Single Pulse Avalanche Energy
Total Power Dissipation
@TC=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE85210
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=100V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=40A
V
DS
=10V, I
D
=20A
-
35
3.2
3.0
85
1
200
3.8
3.8
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V,
f=1MHz
11000
914
695
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=40A
V
GS
=10V, V
DS
=38V,
R
GEN
=1.2Ω
I
D
=40A
V
DS
=60V,
250
48
98
23
130
190
120
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case(t≤10s)
Typ
-
Max
0.4
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE85210
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE85210
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE85210
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
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