SHANGHAI
MICROELECTRONICS CO., LTD.
July 2005
SE2305
20V P-Channel Enhancement-Mode MOSFET
Revision:A
General Description
SE2305 is produced with high cell density
DMOS trench technology, which is especially
used to minimize on-state resistance. This
device particularly suits low voltage
applications such as portable equipment,
power management and other battery
powered circuits, and low in-line power
dissipation are needed in a very small outline
surface mount
.
Features
●
V
DS
= -20V
●
R
DS(on)
= 52mΩ @V
GS
= -1.8V,I
D
= -2A
●
R
DS(on)
= 40mΩ @V
GS
= -2.5V,I
D
= -4.1A
●
R
DS(on)
= 35mΩ@V
GS
= -4.5V
,I
D
= -4.7A
Application
●
Load Switch
●
A Switch and Battery Switch for Portable
Devices
Pin configurations(
SOT23-3
)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation
Continuous
Pulsed
@TA=25°C
@TA=75°C
Operating Junction Temperature Range
T
J
P
D
Symbol
V
DS
V
GS
I
D
Rating
-20
±12
-4.7
-20
1.25
0.8
-55 to 150
°C
W
Units
V
V
A
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE2305
Electrical Characteristics
Symbol
BVDSS
IDSS
IGSS
V
GS
(th)
R
DS(ON)
Parameter
(T
J
=25°C unless otherwise noted)
Test Conditions
OFF CHARACTERISTICS (Note 2)
I
D
=-250μA, V
GS
=0 V
V
DS
=-16 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±8 V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-1.8V, I
D
=-2A
Min
-20
-
-
-0.4
-
-
-
-
-
-
-
Typ
-
-
-
-
42
35
30
1020
191
140
25
71
-
Max
-
1
±100
-1
52
40
35
-
-
-
50
ns
142
-1.2
V
pF
pF
pF
mΩ
Units
V
μA
μA
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
V
GS
=-2.50V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-4.7A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
2
Turn-Off DelayTime
Drain-Source Diode Forward Voltage
V
GS
=0V, V
DS
=-10V,
f=1MHz
SWITCHING PARAMETERS
V
GS
=-10V, V
GEN
=-4.5V,
R
L
=10Ω, R
G
=6Ω
I
D
=-1A
V
GS
=0V,I
S
=-1
ShangHai Sino-IC Microelectronics Co., Ltd.
2.