SE3080A/K
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 30V
R
DS(ON)
= 4.5mΩ @ V
GS
=10V(SE3080A)
R
DS(ON)
= 4.5mΩ @ V
GS
=10V(SE3080K)
TO-252
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Derating factor
Single pulse avalanche energy
Operating Junction Temperature Range
E
AS
T
J
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
Rating
30
±20
80
170
83
0.56
285
-55 to 175
Units
V
V
A
W
W/℃
mJ
℃
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case
Typ
-
Max
1.8
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE3080A/K
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
SE3080A
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
I
D
=250μA, V
GS
=0 V
V
DS
= 30V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=24A
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=24A
30
1
100
1
-
-
-
-
1.6
4.5
7
4.5
7.5
3
6.5
9.5
6.5
10
V
μA
nA
V
mΩ
mΩ
mΩ
mΩ
R
DS(ON)
SE3080K
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V,
f=1MHz
2330
460
230
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V, V
DS
=10V,
R
GEN
=2.7Ω
I
D
=30A
V
GS
=10V, V
DS
=30V,
I
D
=30A
51
14
11
20
60
15
10
nC
nC
nC
ns
ns
ns
ns
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE3080A/K
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE3080A/K
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE3080A/K
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
单片机
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