SHANGHAI
MICROELECTRONICS CO., LTD.
August 2005
SE9435
P-Channel Enhancement Mode Power MOSFET
General Description
The MOSFETs from SINO-IC provide the
best
combination
of
fast
switching,
low
on-resistance and cost-effectiveness.
Features
V
DS
= -30 V
I
D
= -5.3 A
R
DS(ON)
= 0.050
Ω
@V
GS
= -10V
Low gate charge.
Fast switching speed.
Extremely low R
DS(ON)
High power and current handling capability
Applications
Power management in nomadic equipment
DC-DC converters
Battery powered systems
Motor drive
SOP-8
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Power Dissipation
@T
A
=25°C
@T
A
=25°C
@T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
D
Rating
-30
±20
Units
V
V
A
A
A
W
W/°C
°C
°C
-5.3
-4.7
-20
2.5
0.02
-55 to 150
-55 to 150
Linear Dearating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
STG
T
J
Thermal Characteristics
Parameter
Thermal Resistance Junction-to-Ambient
3
Symbol
Max
Units
°C/W
Rthj-amb
50
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE9435
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
(T
J
=25°C unless otherwise noted)
Test Conditions
I
D
= -250μA, V
GS
=0 V
V
DS
= -30 V, V
GS
=0 V
V
DS
= -24 V, V
GS
=0 V (T
J
=70°C)
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
I
D
= -250μA
V
GS
= -10 V, I
D
= -5.3 A
V
GS
= -4.5 V, I
D
= -4.2A
V
DS
= -10V, I
D
= -5.3 A
I
S
= -2.6 A,V
GS
= 0 V
V
D
=V
G
=0V,V
S
=-1.2 V
10
-1.2
-2.08
-1
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Forward Transconductance
Diode Forward Voltage
Body-Diode Continuous Current
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
-1
-25
±100
-3
50
90
μA
μA
nA
V
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
2
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
= -10V, V
DS
= -15V, I
D
= -1A
R
D
=15Ω, R
G
=6Ω
V
GS
= -10V,
I
D
= -5.3A
V
DS
= -15V,
V
GS
=0V, V
DS
= -15 V, f=1MHz
790
440
120
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
20
3.5
2
12
20
45
47
nC
nC
nC
ns
ns
ns
ns
Notes：
1. Pulse width limited by Max. junction temperature.
2. Pluse width≤300us，duty cycle≤2%．
3. Surface mouned on 1 in
2
copper pad of FR4 board；125°C/W when mounted on Min. copper pad
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE9435
Typical Characteristics
Fig1. Typical output characteristics
Fig2. Typical output characteristics
Fig3. On-Resistance v.s. Gate Voltage
Fig4. Normalized On-Resistance
v.s. Junction Temperature
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE9435
Fig5. Maximum Drain Current v.s.
Case Temperature
Fig6. Typical Power Dissipation
Fig7. Maximum Safe Operating Area
Fig8. Effective Transient Thermal
Impedance
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE9435
Fig9. Gate Charge Characteristics
Fig10. Typical Capacitance
Characteristics
Fig11. Forward Characteristic of
Reverse Diode
Fig12. Gate Threshold Voltage v.s.
Junction Temperature
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
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