SED10070GG
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM
applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
D
5
D
6
D
7
D
8
Features
For a single MOSFET
V
DS
= 100V
R
DS(ON)
= 8.2mΩ @ V
GS
=10V
1
S
2
S
3
S
4
G
DFN5*6
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
1,2,3
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
E
AS
T
J
Rating
100
±20
70
280
170
580
-55 to 150
Units
V
V
A
W
mJ
℃
Single-pulse avalanche energy
4
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJA
Parameter
Junction to Ambient
Min
Typ
0.88
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SED10070GGS
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
= 100V, V
GS
=0V
V
GS
=20 V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=39A
V
DS
= 25V, I
D
=28A
32
2
3
8.2
100
1
100
4
9.8
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V,
f=1MHz
4400
320
240
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
DD
=50V,
V
GS
=10V,
I
D
=39A, R
GEN
=2.5Ω
V
DD
=80V, V
GS
=10V,
I
D
=39A
95
18
25
12
45
55
47
nC
nC
nC
ns
ns
ns
ns
Source-Drain Characteristics
Symbol
V
SD
I
S
T
rr
Q
rr
Parameter
Diode forward voltage
Diode forward current
Reverse recovery time
7
Reverse recovery charge
7
T
J
=25℃,I
F
=28A
di/dt=100A/μs
36
56
Test Condition
V
GS
=0V, I
S
=100A
Min
Typ
0.85
Max
1.2
57
Units
V
A
ns
nC
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SED10070GG
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SED10070GG
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SED10070GG
Package Outline Dimension
DFN5 × 6
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
单片机
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