SHANGHAI
MICROELECTRONICS CO., LTD.
August 2005
ESDA6V1L
Dual transil array for ESD protection
General Description
The ESDA6V1L is a dual monolithic voltage
suppressor designed to protect components which
are connected to data and transmission lines
against ESD. It clamps the voltage just above the
logic level supply for positive transients and to a
diode drop below ground for negative transients. It
can also work as bidirectional suppressor by
connecting only pin1 and 2.
Revision:B
Features
2 Unidirectional Transil functions
Low leakage current: I
RM
max< 1
μA
at V
RM
300W peak pulse power(8/20μs)
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Applications
Computers
Printers
Communication systems
It is particularly recommended for the RS232 I/O
port protection where the line interface withstands
only with 2kV ESD surges.
Functional diagram
SOT-23
Absolute Ratings (T
amb
=25°C)
Symbol
P
PP
T
L
T
stg
T
op
T
j
Parameter
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
Electrostatic discharge
V
PP
MIL STD 883C -Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
25
15
8
kV
Value
300
260
-55 to +155
-40 to +125
150
Units
W
°C
°C
°C
°C
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
ESDA6V1L
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics
Part Numbers
Min.
V
ESDA6V1L
6.1
V
BR
Typ.
V
6.7
Max.
V
7.2
I
T
V
RWM
I
R
V
F
Max.
V
1.25
I
F
C
Typ.
0v
bias
mA
1
V
5.25
µA
20
mA
200
pF
140
1.Square pulse I
PP
=15A,t
p
=2.5µs
2.△V
BR
=aT*(T
amb
-25°C)*V
BR
(25°C)
3. Capacitance is measured by pin 1 to pin 3 or pin2 to pin 3.
Typical Characteristics
Fig1.Peak power dissipation versus
Initial junction temperature
Fig2. Peak pulse power versus exponential
pulse duration(T
j
initial=25°C)
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
ESDA6V1L
Fig3. Clamping voltage versus peak
pulse current (T
j
initial=25°C,
rectangular Waveform,t
p
=2.5μs)
Fig4. Capacitance versus reverse
Applied voltage
Fig5.Relative variation of leakage current
Versus junction temperature
Fig6. Peak forward voltage drop versus
peak forward current
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) is an ideal choice for ESD protection. They are capable of clamping the incoming
transient to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
protection elements, connected between the signal lines to ground. As the transient rises above the
operating voltage of the device, the TVS array becomes a low impedance path diverting the transient
current to ground. The ESDA6V1L array is the ideal board evel protection of ESD sensitive semiconductor
components.
The tiny SOT-23 package allows design flexibility in the design of high density boards where the space
saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD.
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
ESDA6V1L
SOT-23 Mechanical Data
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L1
q
S
Millimeters
Min
1.00
0
1.00
0.35
0.10
2.70
2.40
1.40
0.85
1.80
0.40
0°
0.45
TYP
1.20
0.05
1.15
0.40
0.15
2.90
2.60
1.50
1.00
1.90
.
5°
0.50
10°
0.55
Max
1.40
0.10
1.30
0.50
0.20
3.10
2.80
1.60
1.15
2.00
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
ESDA6V1L
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
详细参数
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