SE01P13K
P-Channel Enhancement Mode Power MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= -100V
R
DS(ON)
= 170mΩ @ V
GS
=-10V
Pin configurations
See Diagram below
D
G
D
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
E
AS
T
J
Rating
-100
±20
-13
-30
40
110
-55 to 150
Units
V
V
A
W
mJ
℃
Single Pulse Avalanche Energy
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance, Junction to Case
Typ
-
Max
3.13
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE01P13K
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
gfs
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=-250μA, V
GS
=0 V
V
DS
=-100V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=-10V, I
D
=-16A
V
DS
=-15V, I
D
=-5A
-1
-
12
-1.9
170
-100
-1
10
-3
200
V
μA
μA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-25V,
f=1MHz
760
260
170
pF
pF
pF
SWITCHING PARAMETERS
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
DS
=-50V, V
GS
=-10V
R
GEN
=9.1Ω,ID=-10A
14
50
18
18
ns
ns
ns
ns
Source-Drain Ratings and Characteristics
I
S
V
SD
trr
Qrr
Continuous Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=-10A,VGS=0V
TJ=25℃, IF=-10A
di/dt=100A/μs
35
46
130
-1.2
mA
V
nS
nc
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE01P13K
Test Circuits and Waveform
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE01P13K
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE01P13K
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
FPGA/CPLD
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