SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SESD9DXXC
Transient Voltage Suppressors for ESD Protection
General Description
The SESD9DXXC is designed to protect voltage
sensitive components from ESD and transient voltage
events. Excellent clamping capability, low leakage, and
fast response time, make these parts ideal for ESD
protection on designs where board space is at a
premium. Because of its small size, it is suited for use
in cellular phones, MP3 players, digital cameras and
many other portable applications where board space is
at a premium.
Revision:A
Features
Small Body Outline Dimensions
Low Body Height
Peak Power up to 150 Watts @ 8 x 20
μs
Pulse
Low Leakage current
Response Time is Typically < 1 ns
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Functional diagram
SOD-923
Absolute Ratings (T
amb
=25°C )
Symbol
Parameter
Value
Units
P
PP
T
L
T
stg
T
op
T
j
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
ESD Voltage
Per Human Body Model
Per Machine Model
air discharge
contact discharge
150
260
-55 to +155
-40 to +125
150
±15
±8
40
25
400
W
°C
°C
°C
°C
kV
A
kV
V
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SESD9DXXC
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Reverse Peak
Maximum
Current
Clamping Voltage @ I
PP
Pulse
Working Peak Reverse Voltage
Maximum Reverse Leakage Current
@ V
RWM
Test Current
Breakdown Voltage @ I
T
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
Part Numbers
V
BR
I
BR
Min.
V
SESD9D3V3C
SESD9D5C
SESD9D12C
5.1
5.6
13.3
Typ.
V
6.0
6.7
14.5
Max.
V
6.8
7.8
15.7
mA
1
1
1
V
3.3
5.0
12
µA
1
1
1
V
RWM
I
R
C
Typ. 0v
bias
pF
20
11
9
*Surge current waveform per Figure 1.
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25℃．
Fig1. Pulse Waveform
Fig2. Power Derating Curve
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SESD9DXXC
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient
to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection
elements, connected between the signal lines to ground. As the transient rises above the operating voltage of
the device, the TVS becomes a low impedance path diverting the transient current to ground. The SESD9DXXC
is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOD-923 package allows design flexibility in the design of high density boards where the space
saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD.
SOD-923 Mechanical Data
Dim
Min
A
b
c
D
E
H
E
L
0.36
0.15
0.07
0.75
0.55
0.95
0.05
Millimeters
Nom
0.40
0.20
0.12
0.80
0.60
1.00
0.10
Max
0.43
0.25
0.17
0.85
0.65
1.05
0.15
Min
0.014
0.006
0.003
0.030
0.022
0.037
0.002
Inches
Nom
0.016
0.008
0.005
0.031
0.024
0.039
0.004
Max
0.017
0.010
0.007
0.033
0.026
0.041
0.006
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SESD9DXXC
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
传感器
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