SHANGHAI
MICROELECTRONICS CO., LTD.
July 2009
SE7401U
20V P-Channel Enhancement-Mode MOSFET
Revision:B
General Description
The MOSFETs from SINO-IC provide
the best combination of fast switching, low
on-resistance and cost-effectiveness.
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pb-Free package is available
Features
For a single mosfet
V
DS
= -20 V
R
DS(ON)
= 120mΩ @ V
GS
=-4.50V @Ids=-2.0A
R
DS(ON)
= 150mΩ @ V
GS
=-2.50V @Ids=-1.8A
R
DS(ON)
= 170mΩ @ V
GS
=-1.80V @Ids=-1.8A
Pin configurations
See Diagram below
SOT323
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-20
±8
-2.2
-7
0.9
0.57
-55 to 150
°C
W
Units
V
V
A
Drain Current (Note 1)
Total Power Dissipation
Continuous
Pulsed
@T
A
=25°C
@T
A
=75°C
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE7401U
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
(T
J
=25°C unless otherwise noted)
Test Conditions
I
D
=-250μA, V
GS
=0 V
V
DS
=20 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±10 V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-2.0 A
V
GS
=-2.5V, I
D
=-1.8A
V
GS
=-1.8V, I
D
=-1.8A
V
DS
=5V, I
D
=2A
-0.4
100
120
140
6.5
373
V
GS
=0V, V
DS
=10V, f=1MHz
138
52
15.2
5.5
2.7
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
-20
Typ
Max
Units
V
OFF CHARACTERISTICS (Note 2)
-1
±0.1
-0.9
120
150
170
S
pF
pF
pF
nC
nC
nC
mΩ
μA
μA
V
-
-
DYNAMIC PARAMETERS
SWITCHING PARAMETERS
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
2
Turn-Off DelayTime
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=-4.5V,
I
D
=-2.0A
V
DS
=-6V,
V
GS
=-4.5V, V
DD
=-6V,
R
L
=6Ω, R
G
=6Ω
ID=-1A
17.3
36.0
3.7
3.2
ns
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE7401U
Typical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE7401U
Typical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE7401U
Packaging Information(SOT323)
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
嵌入式系统
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