SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEB161V-20
Schottky barrier diode
Features
●
●
●
Power mold type. (CPD3)
Low V
F
High reliability
Revision:A
Applications
●
General rectification
Construction
●
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Symbol
V
RM
V
R
Limits
25
Unit
V
V
A
A
℃
℃
20
1
30
125
-40
½
+125
I
O
T
FSM
T
j
T
stg
Electrical characteristics (Ta=25℃)
Parameter
Forward voltage
Reverse current
Symbol
V
F2
I
R
—
Min.
Typ.
0.38
280
Max.
0.42
700
Unit
V
uA
Conditions
I
F
=1.0A
V
R
=20V
SEB161V-20
Please pay attention to static electricity when handling.
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SEB161V-20
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© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
4.