SHANGHAI
MICROELECTRONICS CO., LTD.
July 2009
SE2102M
Small Signal MOSFET
20 V, 600 mA, Single N-Channel MOSFET
General Description
The MOSFETs from SINO-IC provide the
best combination of fast switching, low
on-resistance and cost-effectiveness.
Features
●
●
●
●
V
DS (V)
= 20V
I
D
= 600mA
R
DS(ON)
< 350mΩ (V
GS
= 4.5V)
R
DS(ON)
< 470mΩ (V
GS
= 2.5V)
Pin configurations
See Diagram below
MAXIMUM RATINGS (T
J
=25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current(Note1))
Power Dissipation
(Note 1)
Pulsed Drain Current
V
DSS
V
GS
TA = 25°C
TA = 85°C
I
D
P
D
I
DM
T
J
,
T
STG
20
±6.0
600
400
170
1
−55
to
150
250
260
V
V
mA
mW
Steady
State
Steady State
t
p
=10 µs
A
°C
mA
°C
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I
S
T
L
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE2102M
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Zero
Gate
Voltage
Drain
Symbol
V
(BR)DSS
I
DSS
I
GSS
Test Condition
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, V
DS
= 16 V
V
DS
= 0 V, V
GS
= ±4.5 V
Min
20
Typ
26
Max
Unit
V
100
±1.0
nA
µA
Current
Gate−to−Source
Current
Leakage
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
GS(TH)
R
DS(on)
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
On
V
GS
= V
DS
, I
D
= 250 µA
V
GS
= 4.5 V, I
D
= 600 mA
V
GS
= 2.5 V, I
D
= 500 mA
V
GS
= 1.8 V, I
D
= 350 mA
V
DS
= 10 V, I
D
= 400 mA
0.45
280
370
650
1.2
130
21
15
1.4
0.35
0.55
0.9
350
470
900
V
mΩ
mΩ
S
pF
Drain−to−Source
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CHARGES AND CAPACITANCES
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16 V
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
V
GS
= 4.5 V, V
DS
= 10
V, I
D
= 0.25 A
nC
SWITCHING CHARACTERISTICS
(Note 3)
V
GS
= 4.5 V, V
DD
=
10 V,
I
D
= 0.2 A, R
G
= 10
Ω
V
GS
= 0 V,
I
S
mA
=
200
6
6
25
13
0.69
0.58
1.1
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
T
J
= 25°C
T
J
25°C
=1
V
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE2102M
Typical Electrical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE2102M
Typical Electrical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE2102M
Package Dimensions(SOT-723)
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
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