SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
TVSS5VCES-02GP-J
Transient Voltage Suppressors for ESD Protection
General Description
The
TVSS5VCES-02GP-J
is designed to protect voltage
sensitive components from ESD and transient voltage
events. Excellent clamping capability, low leakage, and
fast response time, make these parts ideal for ESD
protection on designs where board space is at a premium.
Revision:B
Features
Small Body Outline Dimensions
Low Body Height
Peak Power up to 200 Watts @ 8 x 20 _µs
Pulse
Low Leakage current
Response Time is Typically < 1 ns
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Complies with the following standards
IEC61000-4-2
Level 4 15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOD-523
Absolute Ratings (T
amb
=25
°
)
C
Symbol
Parameter
Value
Units
P
PP
T
L
T
stg
T
op
T
j
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
ESD Voltage
Per Human Body Model
Per Machine Model
air discharge
contact discharge
200
260
-55 to +155
-40 to +125
150
±15
±8
40
16
400
W
°
C
°
C
°
C
°
C
kV
A
kV
V
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
TVSS5VCES-02GP-J
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Reverse Peak
Maximum
Current
Clamping Voltage @ I
PP
Pulse
Working Peak Reverse Voltage
Maximum Reverse Leakage Current
@ V
RWM
Test Current
Breakdown Voltage @ I
T
Electrical Characteristics
Part Numbers
TVSS5VCES-02GP-J
Min.
V
5.8
Ratings at 25° ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
C
V
BR
Typ.
V
6.7
Max.
V
7.8
I
T
mA
1
V
RWM
V
5.0
I
R
µA
1
V
F
Max.
V
1.25
I
F
Typ.
mA
200
C
Typ. 0v bias
pF
30
*Surge current waveform per Figure 1.
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25℃．
Typical Characteristics
Fig1. Pulse Waveform
Fig2.Power Derating Curve
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
TVSS5VCES-02GP-J
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
transient to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection
elements, connected between the signal lines to ground. As the transient rises above the operating voltage
of the device, the TVS becomes a low impedance path diverting the transient current to ground. The
TVSS5VCES-02GP-J
is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOD-523 package allows design flexibility in the design of high density boards where the
space saving is at a premium. This enables to shorten the routing and contributes to hardening against
ESD.
SOD-523 Mechanical Data
Dim
A
B
C
D
J
K
S
Millimeters
MIN
1.10
0.70
0.50
0.25
0.07
0.15
1.50
NOM
1.20
0.80
0.60
0.30
0.14
0.20
1.60
MAX
1.30
0.90
0.70
0.35
0.20
0.25
1.70
MIN
0.043
0.028
0.020
0.010
0.0028
0.006
0.059
INCHES
NOM
0.047
0.032
0.024
0.012
0.0055
0.008
0.063
MAX
0.051
0.035
0.028
0.014
0.0079
0.010
0.067
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.net
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
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