SHANGHAI
MICROELECTRONICS CO., LTD.
June 2013
SEDFN2105C
Single Line ESD Protection Diode with Low Capacitance
General Description
The SEDFN2105C is designed to replace multilayer
varistors (MLVs) in portable applications such as cell
phones,notebook computers,and PDA’s.They feature
large cross-sectional area junctions for conducting high
transient
currents,offer
desirable
electrical
characteristics for board level protection,such as fast
response time,lower operating voltage,lower clamping
voltage and no device degradation when compared to
MLVs.
Revision:A
Features
Equivalent to 0201 package
Low Body Height: 0.28mm
Small package for use in portable electionics
Low Leakage current
These are Pb−Free Devices
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
Applications
Cellular phones handsets and Accessories
PDA’s
MP3 players
Digital cameras
Portable applications
Mobile telephone
MIL STD 883E - Method 3015-7 Class 3
Functional diagram
DFN0603-D
Absolute Ratings (T
amb
=25
°
)
C
Symbol
Parameter
Value
Units
IEC 61000-4-2 (ESD) Contact
P
D
T
L
T
stg
T
j
Total Power Dissioation on FR-5 Board (Note 1)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Maximum junction temperature
8
200
260
-55 to +155
-55 to +155
kV
mW
°
C
°
C
°
C
Stresses exceeding Maximum Ratings may damage the device.Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1.FR-5=1.0*0.75*0.62 in.
ShangHai Sino-IC Microelectronics Co., Ltd.
1
SEDFN2105C
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Reverse Peak
Maximum
Current
Clamping Voltage @ I
PP
Pulse
Working Peak Reverse Voltage
Maximum Reverse Leakage Current
@ V
RWM
Test Current
Breakdown Voltage @ I
T
Electrical Characteristics
Ratings at 25° ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
C
V
BR
Part Numbers
SEDFN2105C
Min.
V
5.6
Typ.
V
7.0
Max.
V
8.5
I
T
mA
1
V
RWM
V
5.0
I
R
µA
1
V
c
@Ipp
MAX
=5.5A
V
12.5
C
Max. 0v bias
pF
15
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25℃.
2. Surge current waveform per Figure 5.
3. For test procedure see Figures 3 and 4.
Typical Characteristics
Figure 1.ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000-4-2
Figure 2.ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000-4-2
ShangHai Sino-IC Microelectronics Co., Ltd.
2
SEDFN2105C
Figure 3.IEC 61000-4-2 Spec
Figure 4. Diagram of ESD Test Setup
Figure 5.8*20 us Pulse Waveform
ShangHai Sino-IC Microelectronics Co., Ltd.
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SEDFN2105C
DFN10603-D Package Outline Dimensions
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.cn
33932403
33932405
33933508
33933608
ShangHai Sino-IC Microelectronics Co., Ltd.
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