S3ABG THRU S3MBG
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V Forward Current - 3 A
PINNING
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.055g / 0.002oz
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code： S3A~S3M
Simplified outline SMB and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
S3AB
G
S3BB
G
S3DB
G
S3GB
G
S3JB
G
S3KB
G
S3MB
G
Units
V
V
V
50
35
50
100
70
100
200
140
200
400
280
400
3
600
420
600
800
560
800
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
（1）
A
A
V
I
FSM
90
V
F
1.1
5
100
35
48
16
-55 ~ +150
T
a
= 25
°C
T
a
=125
°C
I
R
μA
C
j
R
θJA
R
θJC
T
j
, T
stg
pF
°C/W
°C
Typical Thermal Resistance
（2）
Operating and Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
REV.08
1 of 3
S3ABG THRU S3MBG
Fig.1 Forward Current Derating Curve
5.0
4.0
Fig.2 Typical Instaneous Reverse
Characteristics
Instaneous Reverse Current (
μ
A)
100
T
J
=150
°C
Average Forward Current (A)
10
T
J
=125
°C
T
J
=100
°C
3.0
2.0
1.0
T
J
=75
°C
1.0
0.0
Single phase half-wave 60 Hz
resistive or inductive load
0.1
T
J
=25
°C
0.01
0
200
400
600
800
25
50
75
100
125
150
175
Case Temperature (°C)
Instaneous Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
T
J
=25
°C
0.1
0.4
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
REV.08
2 of 3
嵌入式系统
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