BAS316
FEATURES
▪
For surface mounted applications
▪
Glass Passivated Chip Junction
▪
Fast reverse recovery time
▪
Ideal for automated placement
▪
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
▪Case:
SOD-323
▪Terminals:
Solderable per MIL-STD-750, Method 2026
▪
A pprox. Weight: 5.48mg / 0.00019oz
Absolute Maximum Ratings at 25
°C
Parameter
Maximum Repetitive Peak Reverse Voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Simplified outline SOD-323 and symbol
Symbols
V
RRM
V
RMS
I
F
at 1ms
BAS316
100
75
300
4
400
-55 ~ +150
Units
V
V
Maximum RMS voltage
Continuous
Forward Current
Non-reptitive Peak Forward Surge Current
mA
A
mW
°C
I
FSM
P
tot
T
j
, T
stg
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at
T
a
= 25
°C
Parameter
Reverse Breakdown Voltage at I
R
=1
μA
Symbols
V
(BR)R
BAS316
75
Units
V
Maximum Forward Voltage
at 150 m A
V
F
1.1
V
Peak Reverse Current
at V
R
=75V T
j
=25
°C
at V
R
=75V
T
j
=150
°C
I
R
1
50
μA
Typical Junction Capacitance
(1)
C
j
t
rr
Typical
5
6
pF
ns
Maximum Reverse Recovery Time
（1）Measured
with IF = 0.5 A, IR = 1 A, Irr
=
0.25 A
REV.08
1 of 3
BAS316
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current（
μ
A）
500
100
Fig.2 Typical Reverse Characteristics
Total Power Dissipation (mW)
400
10
T
J
=150
°C
300
1
200
0.1
100
T
J
=25
°C
0.01
00
20
40
60
80
100
120
0.0
25
50
75
100
125
150
175
Ambient Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (mA)
Junction Capacitance ( pF)
1000
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
100
10
10
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
=25
°C
1.4
1.6
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
REV.08
2 of 3
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