2SD1623
NPN-Silicon
General use Transistors
1W
、1.5A、25V
Applications
：Can
be used for switching and amplifying in various
4
electrical and electronic circuit.
Maximum ratings
Parameters
Collector-emitter voltage (I
B
=0)
Collector-base voltage（I
E
=0）
Emitter-base voltage（I
C
=0）
Collector current
Total
power(T
A
=25℃)
*
Junction temperature
Storage temperature
dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
Rating
25
40
6
1.5
1
150
-55½150
Unit
V
V
V
A
W
℃
℃
1
2
3
SOT-89
Marking
2SD1623=DFS2N
* Device is mounted on a printed circuit board.
Electrical characteristics（Unless otherwise specified，T
A
=25℃）
Parameters
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Forward current
transfer ratio
Collector-base current
Collector-emitter saturation voltage
Characteristic frequency
2SD1623
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
I
CBO
V
CE
（
sat
）
f
T
Test condition
I
C
=2mA，I
B
=0
I
C
=100µA，I
E
=0
I
E
=100µA，I
C
=0
Min.
25
40
6
typ
—
—
—
Max.
—
—
—
Unit
V
V
V
V
CE
=1V；I
C
=100mA
160
—
300
—
V
CB
=35V，I
E
=0
I
C
=800mA，
B
=80mA
I
I
C
=50mA，
CE
=10V，
V
f=100MHz
—
—
—
—
—
100
100
0.5
—
nA
V
MHz
REV.08
1 of
3
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