2SC2884Y
NPN-General use transistor
1W
、1.5A、25V
Applications：
Can be used for switching and amplifying in various electrical and
electronic equipments
4
MAX RATINGS
parameters
collector-emitter voltage（I
B
=0）
collector-base voltage（I
E
=0）
emitter - base voltage（I
C
=0）
Collector current
Total power dissipation (T
A
=25℃)
*
Max junction temperature
Storage temperature
* mounted on printed circuit board.
ELECTRONIC CHARACTERISTIC
（
（Unless
otherwise specified T
A
=25℃）
parameters
collector-emitter breakdown voltage
collector- base breakdown voltage
emitter - base breakdown voltage
1)
Forward current transfer ratio
1
2
3
symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
rating
25
40
6
1.5
1
150
-55½150
unit
V
V
V
A
W
℃
℃
SOT-89
1：Base 2：Collector 3
Collector 3：Emitter
symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
I
CBO
I
EBO
V
CE
（
sat
）
f
T
Test condition
I
C
=2mA，I
B
=0
I
C
=100µA，I
E
=0
I
E
=100µA，I
C
=0
V
CE
=1V；I
C
=100mA
V
CB
=35V，I
E
=0
V
EB
=6V，I
C
=0
I
C
=800mA，I
B
=80mA
I
C
=50mA，
CE
=10V，
V
f=100MHz
min
25
40
6
200
—
—
—
—
typ
—
—
—
—
—
—
—
100
max
—
—
—
300
100
100
0.5
—
unit
V
V
V
—
nA
nA
V
MHz
collector-base cutoff current
emitter-base cutoff current
collector-emitter saturation voltage
1)
Transition frequency
1)
pulse method：t
w
:300µs，duty ratio≤2％
％.
REV.08
1 of 2
微控制器 MCU
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