2SD874A
SOT-89
FEATURES
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Complementary to 2SB766A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
40
5
1
0.5
150
-55~150
Unit
V
V
V
A
W
℃
Plastic-Encapsulate Transistors
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
TRANSISTOR (NPN)
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=5V,I
C
=1A
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=10V,I
C
=50mA,f=200MHz
V
CB
=10V,I
E
=0,f=1MHz
200
20
50
0.4
1.2
V
V
MHz
pF
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test conditions
I
C
=10μA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=500mA
85
Min
50
40
5
0.1
0.1
340
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
85-170
YQ
R
120-240
YR
S
170-340
YS
REV.08
1 of 3
2SD874A
Static Characteristic
0.8
0.7
COMMON
EMITTER
T
a
=25
℃
(A)
5.0mA
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
h
FE
1000
h
FE
——
I
C
0.6
T
a
=100
℃
T
a
=25
℃
100
I
C
COLLECTOR CURRENT
0.5
0.4
1.5mA
0.3
0.2
1.0mA
I
B
=0.5mA
0.1
DC CURRENT GAIN
COMMON EMITTER
V
CE
= 10V
13
10
0.4
1
10
100
1000
0.0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1200
V
BEsat
——
β=10
I
C
1000
V
CEsat
β=10
——
I
C
900
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
600
100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
300
0.1
1
10
100
1000
10
0.1
1
10
100
1000
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
1000
I
C
COMMON EMITTER
V
CE
=10V
——
V
BE
1000
f
T
——
I
C
(mA)
100
f
T
10
(MHz)
TRANSITION FREQUENCY
100
I
C
COLLECTOR CURRENT
T=
a
10
0
℃
T =2
5
℃
a
10
1
COMMON EMITTER
V
CE
= 10V
T
a
=25
℃
1
2.38
0.1
300
600
900
1200
10
70
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
1000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
600
P
C
——
T
a
(pF)
100
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
CAPACITANCE
C
C
ib
10
400
300
C
ob
200
1
100
0.1
0.3
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
REV.08
2 of 3
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
