2SD2150
NPNGeneral use transistor
1.2W
3A 30V
4
Applications：
Can be used for switching and amplifying in
various electrical and electronic equipments.
1
2
3
SOT-89
MAX RATING
Parameters
Collector–emitter voltage（I
B
=0）
Collector–base voltage（I
E
=0）
Emitter – base voltage（I
C
=0）
Collector current
Total
power
(T
A
=25℃)
*
Storage temperature
* mounted on printed circuit board.
dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
Rating
30
40
5
3
1.2
150
-55½150
Unit
V
V
V
A
W
℃
℃
Max junction temperature
Characteristics
（Unless
otherwise specified，T
A
=25℃）
Parameters
Collector–emitter breakdown voltage
Collector–base breakdown voltage
Emitter– base breakdown voltage
Forward
current transfer
ratio
1)
R
S
I
CBO
V
CE
（
sat
）
f
T
V
CB
=30V，I
E
=0
I
C
=2A，I
B
=200mA
I
C
=100mA
，
symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
Test condition
I
C
=10mA，I
B
=0
I
C
=1mA，I
E
=0
I
E
=1mA，I
C
=0
V
CE
=2V；I
C
=1A
min
30
40
5
180
270
—
—
—
typ
—
—
—
—
—
—
—
90
max
—
—
—
390
560
1
0.5
—
unit
V
V
V
—
—
μA
V
MHz
Collector–base cutoff current
Collector–emitter saturation
voltage
1
)
Transition frequency
1)
f=100MHz
V
CE
=5V，
pulse method：t
w
:300µs，duty ratio≤2％.
REV.08
1 of 2
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
