KTC4375
NPN Plastic-Encapsulate Transistors
Encapsulate
FEATURES
Low voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
0.5
150
-55~150
Unit
V
V
V
A
W
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=0.5A
I
C
=1.5A,I
B
=30mA
V
CE
=2V,I
C
=0.5A
V
CE
=2V,I
C
=500mA
V
CB
=10V,I
E
=0,f=1MHz
120
40
100
Min
30
30
5
0.1
0.1
320
2
1
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
O
100-200
GO
Y
160-320
GY
REV.08
1 of 3
KTC4375
Typical Characteristics
1000
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
2.4mA
600
h
FE
——
V
CE
= 2V
I
C
COLLECTOR CURRENT I
C
(mA)
600
2.1mA
1.8mA
400
1.5mA
1.2mA
0.9mA
DC CURRENT GAIN h
FE
800
3.0mA
2.7mA
400
T
a
=100 C
o
200
T
a
=25 C
o
200
0.6mA
I
B
=0.3mA
0
0
1
2
3
4
5
6
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
100
I
C
(mA)
1000 1500
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=50
350
V
CEsat
——
β=50
I
C
1.0
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
250
0.8
T
a
=25
℃
200
0.6
150
0.4
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
1
10
100
10001500
0.2
50
0.0
0.1
0
1
10
100
10001500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
250
f
T
——
I
C
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
TRANSITION FREQUENCY f
T
(MHz)
150
CAPACITANCE C (pF)
200
T
a
=25 C
o
C
ib
100
100
C
ob
50
V
CE
=2V
T
a
=25 C
0
0
20
40
60
80
100
10
0.1
1
10
20
o
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
V
BE
——
1500
1000
I
C
1.0
P
c
——
T
a
100
Ta=100 C
o
COLLECTOR CURRENT
COLLECTOR POWER DISSIPATION
P
c
(W)
VCE=2V
1.0
I
C
(mA)
10
0.5
Ta=25
℃
1
0.1
0.2
0.0
0.4
0.6
0.8
0
25
50
75
100
125
150
BASE-EMITTER VOLTAGE
V
BE
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
REV.08
2 of 3
KTC4375
SOT-89
Package Outline Dimensions
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89 Suggested Pad Layout
REV.08
3 of 3
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