FCX491
NPN-General use transistor
1W
1A
60V
4
Applications：
Can be used for switching and amplifying in
various electrical and electronic equipments.
1
2
3
SOT-89
Max ratings
Parameters
Collector–emitter voltage（I
B
=0）
Collector–base voltage（I
E
=0）
Emitter – base voltage（I
C
=0）
Collector current
Total power dissipation
(T
A
=25℃)
*
Max junction temperature
Storage temperature
* mounted on printed circuit board.
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
Rating
60
80
5
1
1
150
-55½150
Unit
V
V
V
A
W
℃
℃
Characteristics
（Unless
otherwise specified，T
A
=25℃）
Parameters
Collector–emitter breakdown voltage
Collector–base breakdown voltage
Emitter– base breakdown voltage
Forward current transfer ratio
1)
Collector–base cutoff current
Collector–emitter
)
voltage
1
Transition frequency
1)
symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
I
CBO
V
CE
（
sat
）
f
T
Test condition
I
C
=1mA，I
B
=0
I
C
=100µA，I
E
=0
I
E
=100µA，I
C
=0
V
CE
=2V；I
C
=150mA
V
CB
=30V，I
E
=0
I
C
=500mA，I
B
=50mA
I
C
=10mA，V
CE
=5V，
f=100MHz
min
60
80
5
100
—
—
—
typ
—
—
—
—
—
—
130
max
—
—
—
300
100
0.5
—
unit
V
V
V
—
nA
V
MHz
saturation
pulse method：t
w
:300µs，duty ratio≤2％.
REV.08
1 of 2
FPGA/CPLD
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